Name: IXYS IXBK75N170A
Brand: IXYS
SKU: IXBK75N170A
Availability: InStock

Specifications
Product Details - IXBK75N170A

IXBK75N170A Tech Specifications
IXYS - IXBK75N170A technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXBK75N170A

Manufacturer IXYS / Littelfuse

Voltage - Collector Emitter Breakdown (Max) 1700 V

Vce(on) (Max) @ Vge, Ic 6V @ 15V, 42A

Test Condition 1360V, 42A, 1Ohm, 15V

Td (on/off) @ 25°C 26ns/418ns

Switching Energy 3.8mJ (off)

Supplier Device Package TO-264AA

Series BIMOSFET™

Reverse Recovery Time (trr) 360 ns

Power - Max 1040 W

Package / Case TO-264-3, TO-264AA

Package Tube

Operating Temperature -55°C ~ 150°C (TJ)

Mounting Type Through Hole

Input Type Standard

IGBT Type -

Gate Charge 358 nC

Current - Collector Pulsed (Icm) 300 A

Current - Collector (Ic) (Max) 110 A

Base Product Number IXBK75
TheIXBK75N170Ais a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is IGBT 1700V 110A 1040W TO264 and it falls under the category of Transistors - IGBTs - Single, with Manufacturer of IXYS / Littelfuse and Voltage - Collector Emitter Breakdown (Max) of 1700 V and Vce(on) (Max) @ Vge, Ic of 6V @ 15V, 42A. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXBK75N170A or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute
Part Number	IXBK75N170A	IXBL20N300C	IXBK55N300	IXBH6N170
Manufacturer	IXYS	IXYS	IXYS	IXYS
Voltage - Collector Emitter Breakdown (Max)	1700 V	3000 V	3000 V	1700 V
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Current - Collector (Ic) (Max)	110 A	50 A	130 A	12 A
Reverse Recovery Time (trr)	360 ns	864 ns	1.9 µs	1.08 µs
Series	BIMOSFET™	BIMOSFET™	BIMOSFET™	BIMOSFET™
Power - Max	1040 W	417 W	625 W	75 W
Gate Charge	358 nC	425 nC	335 nC	17 nC
Base Product Number	IXBK75	IXBL20	IXBK55	IXBH6
IGBT Type	-	-	-	-
Package	Tube	Tube	Tube	Tube
Supplier Device Package	TO-264AA	ISOPLUSi5-Pak™	TO-264AA	TO-247AD
Switching Energy	3.8mJ (off)	23mJ (on), 2.6mJ (off)	-	-
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Input Type	Standard	Standard	Standard	Standard
Package / Case	TO-264-3, TO-264AA	ISOPLUSi5-Pak™	TO-264-3, TO-264AA	TO-247-3
Current - Collector Pulsed (Icm)	300 A	430 A	600 A	36 A
Test Condition	1360V, 42A, 1Ohm, 15V	1500V, 20A, 3Ohm, 15V	-	-
Vce(on) (Max) @ Vge, Ic	6V @ 15V, 42A	6V @ 15V, 20A	3.2V @ 15V, 55A	3.4V @ 15V, 6A
Td (on/off) @ 25°C	26ns/418ns	33ns/370ns	-	-

Brand introduction

IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

IXYS / Littelfuse

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