Name: IXYS IXDN75N120
Brand: IXYS
SKU: IXDN75N120
Price: 21.43 USD
Availability: InStock

Specifications
Product Details - IXDN75N120

IXDN75N120 Tech Specifications
IXYS - IXDN75N120 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXDN75N120

Manufacturer IXYS / Littelfuse

Voltage - Collector Emitter Breakdown (Max) 1200 V

Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 75A

Supplier Device Package SOT-227B

Series -

Power - Max 660 W

Package / Case SOT-227-4, miniBLOC

Package Tube

Operating Temperature -40°C ~ 150°C (TJ)

NTC Thermistor No

Mounting Type Chassis Mount

Input Capacitance (Cies) @ Vce 5.5 nF @ 25 V

Input Standard

IGBT Type NPT

Current - Collector Cutoff (Max) 4 mA

Current - Collector (Ic) (Max) 150 A

Configuration Single

Base Product Number IXDN75
TheIXDN75N120is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is IGBT MOD 1200V 150A 660W SOT227B and it falls under the category of Transistors - IGBTs - Modules, with Manufacturer of IXYS / Littelfuse and Voltage - Collector Emitter Breakdown (Max) of 1200 V and Vce(on) (Max) @ Vge, Ic of 2.7V @ 15V, 75A. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXDN75N120 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute
Part Number	IXDN75N120	IXDN55N120D1	IXDP20N60BD1	IXDN509D1T/R
Manufacturer	IXYS	IXYS	IXYS	IXYS
Package / Case	SOT-227-4, miniBLOC	SOT-227-4, miniBLOC	TO-220-3	6-VDFN Exposed Pad
IGBT Type	NPT	NPT	NPT	-
Supplier Device Package	SOT-227B	SOT-227B	TO-220-3	6-DFN (4x5)
Current - Collector Cutoff (Max)	4 mA	3.8 mA	-	-
Power - Max	660 W	450 W	140 W	-
Base Product Number	IXDN75	IXDN55	IXDP20	IXDN509
Series	-	-	-	-
Voltage - Collector Emitter Breakdown (Max)	1200 V	1200 V	600 V	-
Package	Tube	Tube	Tube	Tape & Reel (TR)
Configuration	Single	Single	-	-
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 75A	2.8V @ 15V, 55A	2.8V @ 15V, 20A	-
Input Capacitance (Cies) @ Vce	5.5 nF @ 25 V	3.3 nF @ 25 V	-	-
Current - Collector (Ic) (Max)	150 A	100 A	32 A	-
Operating Temperature	-40°C ~ 150°C (TJ)	-40°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Input	Standard	Standard	-	-
NTC Thermistor	No	No	-	-
Mounting Type	Chassis Mount	Chassis Mount	Through Hole	Surface Mount

Brand introduction

IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

IXYS / Littelfuse

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