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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFA3N80
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IXFA3N80IXYS MOSFET N-CH 800V 3.6A TO263
Part NumberIXFA3N80
PackageTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFA3N80
DescriptionMOSFET N-CH 800V 3.6A TO263
In stock3196
Data sheet
IXFA3N80.pdf
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  • Specifications
  • Product Details - IXFA3N80
  • IXFA3N80 Tech Specifications
    IXYS - IXFA3N80 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFA3N80
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4.5V @ 1mA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-263AA (IXFA)
    Series HiPerFET™
    Rds On (Max) @ Id, Vgs 3.6Ohm @ 500mA, 10V
    Power Dissipation (Max) 100W (Tc)
    Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Surface Mount
    Input Capacitance (Ciss) (Max) @ Vds 685 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 800 V
    Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)
    Base Product Number IXFA3
  • TheIXFA3N80is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 800V 3.6A TO263 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4.5V @ 1mA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFA3N80 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFA3N80 IXFA4N85X IXFA36N30P3 IXFA56N30X3
Part Number IXFA3N80 IXFA4N85X IXFA36N30P3 IXFA56N30X3
Manufacturer IXYS IXYS IXYS IXYS
Vgs(th) (Max) @ Id 4.5V @ 1mA 5.5V @ 250µA 4.5V @ 250µA 4.5V @ 1.5mA
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Drain to Source Voltage (Vdss) 800 V 850 V 300 V 300 V
FET Type N-Channel N-Channel N-Channel N-Channel
Power Dissipation (Max) 100W (Tc) 150W (Tc) 347W (Tc) 320W (Tc)
Rds On (Max) @ Id, Vgs 3.6Ohm @ 500mA, 10V 2.5Ohm @ 2A, 10V 110mOhm @ 18A, 10V 27mOhm @ 28A, 10V
Base Product Number IXFA3 IXFA4N85 IXFA36 IXFA56
Supplier Device Package TO-263AA (IXFA) TO-263 (IXFA) TO-263AA (IXFA) TO-263AA (IXFA)
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V 7 nC @ 10 V 30 nC @ 10 V 56 nC @ 10 V
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc) 3.5A (Tc) 36A (Tc) 56A (Tc)
Series HiPerFET™ HiPerFET™, Ultra X HiPerFET™, Polar3™ HiPerFET™, Ultra X3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs (Max) ±20V ±30V ±20V ±20V
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
FET Feature - - - -
Package Tube Tube Tube Tube
Input Capacitance (Ciss) (Max) @ Vds 685 pF @ 25 V 247 pF @ 25 V 2040 pF @ 25 V 3750 pF @ 25 V
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  • IXFA3N80 Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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