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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFB170N30P
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IXFB170N30PIXYS MOSFET N-CH 300V 170A PLUS264
Part NumberIXFB170N30P
PackageTO-264-3, TO-264AA
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFB170N30P
DescriptionMOSFET N-CH 300V 170A PLUS264
In stock30654
Data sheet
IXFB170N30P.pdf
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  • Specifications
  • Product Details - IXFB170N30P
  • IXFB170N30P Tech Specifications
    IXYS - IXFB170N30P technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFB170N30P
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4.5V @ 1mA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package PLUS264™
    Series HiPerFET™, Polar
    Rds On (Max) @ Id, Vgs 18mOhm @ 85A, 10V
    Power Dissipation (Max) 1250W (Tc)
    Package / Case TO-264-3, TO-264AA
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 20000 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 258 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 300 V
    Current - Continuous Drain (Id) @ 25°C 170A (Tc)
    Base Product Number IXFB170
  • TheIXFB170N30Pis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 300V 170A PLUS264 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4.5V @ 1mA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFB170N30P or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFB170N30P IXFB100N50P IXFA90N20X3 IXFB38N100Q2
Part Number IXFB170N30P IXFB100N50P IXFA90N20X3 IXFB38N100Q2
Manufacturer IXYS IXYS IXYS IXYS
Vgs(th) (Max) @ Id 4.5V @ 1mA 5V @ 8mA 4.5V @ 1.5mA 5.5V @ 8mA
FET Type N-Channel N-Channel N-Channel N-Channel
FET Feature - - - -
Drain to Source Voltage (Vdss) 300 V 500 V 200 V 1000 V
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Input Capacitance (Ciss) (Max) @ Vds 20000 pF @ 25 V 20000 pF @ 25 V 5420 pF @ 25 V 13500 pF @ 25 V
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-264-3, TO-264AA
Series HiPerFET™, Polar HiPerFET™, Polar HiPerFET™, Ultra X3 HiPerFET™, Q2 Class
Gate Charge (Qg) (Max) @ Vgs 258 nC @ 10 V 240 nC @ 10 V 78 nC @ 10 V 250 nC @ 10 V
Mounting Type Through Hole Through Hole Surface Mount Through Hole
Package Tube Tube Tube Tube
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (Max) ±20V ±30V ±20V ±30V
Supplier Device Package PLUS264™ PLUS264™ TO-263AA (IXFA) PLUS264™
Current - Continuous Drain (Id) @ 25°C 170A (Tc) 100A (Tc) 90A (Tc) 38A (Tc)
Base Product Number IXFB170 IXFB100 IXFA90 IXFB38
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 18mOhm @ 85A, 10V 49mOhm @ 50A, 10V 12.8mOhm @ 45A, 10V 250mOhm @ 19A, 10V
Power Dissipation (Max) 1250W (Tc) 1890W (Tc) 390W (Tc) 890W (Tc)
  • IXYS Related Products
  • IXFB170N30P Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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