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IXFH12N100PIXYS MOSFET N-CH 1000V 12A TO247AD
Part NumberIXFH12N100P
PackageTO-247-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFH12N100P
DescriptionMOSFET N-CH 1000V 12A TO247AD
In stock4657
Data sheet
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  • Specifications
  • Product Details - IXFH12N100P
  • IXFH12N100P Tech Specifications
    IXYS - IXFH12N100P technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFH12N100P
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5V @ 1mA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-247AD (IXFH)
    Series HiPerFET™, Polar
    Rds On (Max) @ Id, Vgs 1.05Ohm @ 6A, 10V
    Power Dissipation (Max) 463W (Tc)
    Package / Case TO-247-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 4080 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 1000 V
    Current - Continuous Drain (Id) @ 25°C 12A (Tc)
    Base Product Number IXFH12
  • TheIXFH12N100Pis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 1000V 12A TO247AD and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5V @ 1mA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFH12N100P or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFH12N100P IXFH110N15T2 IXFH12N120P IXFH13N50
Part Number IXFH12N100P IXFH110N15T2 IXFH12N120P IXFH13N50
Manufacturer IXYS IXYS IXYS IXYS
Drain to Source Voltage (Vdss) 1000 V 150 V 1200 V 500 V
Power Dissipation (Max) 463W (Tc) 480W (Tc) 543W (Tc) 180W (Tc)
Input Capacitance (Ciss) (Max) @ Vds 4080 pF @ 25 V 8600 pF @ 25 V 5400 pF @ 25 V 2800 pF @ 25 V
FET Type N-Channel N-Channel N-Channel N-Channel
Supplier Device Package TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH)
Vgs (Max) ±30V ±20V ±30V ±20V
Package Tube Tube Tube Tube
Base Product Number IXFH12 IXFH110 IXFH12 IXFH13
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 150 nC @ 10 V 103 nC @ 10 V 120 nC @ 10 V
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 110A (Tc) 12A (Tc) 13A (Tc)
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Series HiPerFET™, Polar HiPerFET™, TrenchT2™ HiPerFET™, Polar HiPerFET™
Vgs(th) (Max) @ Id 5V @ 1mA 4.5V @ 250µA 6.5V @ 1mA 4V @ 2.5mA
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Feature - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Rds On (Max) @ Id, Vgs 1.05Ohm @ 6A, 10V 13mOhm @ 500mA, 10V 1.35Ohm @ 500mA, 10V 400mOhm @ 6.5A, 10V
Payment Support The payment method can be chosen from the methods shown below: Wire Transfer (T/T, Bank Transfer), Western Union, Credit card, PayPal.
Certifications & Memberships We strictly controls the quality of products, environment and services.Through the ISO certification of the third party. View More >

Brand introduction

IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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