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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFH230N10T
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IXFH230N10TIXYS MOSFET N-CH 100V 230A TO247AD
Part NumberIXFH230N10T
PackageTO-247-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFH230N10T
DescriptionMOSFET N-CH 100V 230A TO247AD
In stock3808
Data sheet
IXFH230N10T.pdf
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  • Specifications
  • Product Details - IXFH230N10T
  • IXFH230N10T Tech Specifications
    IXYS - IXFH230N10T technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFH230N10T
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4.5V @ 1mA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-247AD (IXFH)
    Series HiPerFET™, Trench
    Rds On (Max) @ Id, Vgs 4.7mOhm @ 500mA, 10V
    Power Dissipation (Max) 650W (Tc)
    Package / Case TO-247-3
    Package Tube
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 15300 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 250 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 100 V
    Current - Continuous Drain (Id) @ 25°C 230A (Tc)
    Base Product Number IXFH230
  • TheIXFH230N10Tis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 100V 230A TO247AD and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4.5V @ 1mA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFH230N10T or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFH230N10T IXFH21N50F IXFH23N60Q IXFH23N80Q
Part Number IXFH230N10T IXFH21N50F IXFH23N60Q IXFH23N80Q
Manufacturer IXYS IXYS IXYS IXYS
Supplier Device Package TO-247AD (IXFH) TO-247 (IXFH) TO-247AD (IXFH) TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Rds On (Max) @ Id, Vgs 4.7mOhm @ 500mA, 10V 250mOhm @ 10.5A, 10V 320mOhm @ 500mA, 10V 420mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C 230A (Tc) 21A (Tc) 23A (Tc) 23A (Tc)
Drain to Source Voltage (Vdss) 100 V 500 V 600 V 800 V
Gate Charge (Qg) (Max) @ Vgs 250 nC @ 10 V 77 nC @ 10 V 90 nC @ 10 V 130 nC @ 10 V
Vgs (Max) ±20V ±20V ±30V ±30V
Series HiPerFET™, Trench HiPerRF™ HiPerFET™ HiPerFET™, Q Class
FET Feature - - - -
Power Dissipation (Max) 650W (Tc) 300W (Tc) 400W (Tc) 500W (Tc)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Base Product Number IXFH230 IXFH21 IXFH23 IXFH23
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 15300 pF @ 25 V 2600 pF @ 25 V 3300 pF @ 25 V 4900 pF @ 25 V
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id 4.5V @ 1mA 5.5V @ 4mA 4.5V @ 4mA 4.5V @ 3mA
Package Tube Tube Tube Tube
  • IXYS Related Products
  • IXFH230N10T Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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