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IXFH270N06T3IXYS MOSFET N-CH 60V 270A TO247
Part NumberIXFH270N06T3
PackageTO-247-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFH270N06T3
DescriptionMOSFET N-CH 60V 270A TO247
In stock6393
Data sheet
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  • Specifications
  • Product Details - IXFH270N06T3
  • IXFH270N06T3 Tech Specifications
    IXYS - IXFH270N06T3 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFH270N06T3
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4V @ 250µA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-247 (IXTH)
    Series HiperFET™, TrenchT3™
    Rds On (Max) @ Id, Vgs 3.1mOhm @ 100A, 10V
    Power Dissipation (Max) 480W (Tc)
    Package / Case TO-247-3
    Package Tube
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 12600 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 60 V
    Current - Continuous Drain (Id) @ 25°C 270A (Tc)
    Base Product Number IXFH270
  • TheIXFH270N06T3is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 60V 270A TO247 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4V @ 250µA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFH270N06T3 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFH270N06T3 IXFH26N50 IXFH26N60P IXFH26N50P
Part Number IXFH270N06T3 IXFH26N50 IXFH26N60P IXFH26N50P
Manufacturer IXYS IXYS IXYS IXYS
Vgs (Max) ±20V ±20V ±30V ±30V
FET Feature - - - -
Base Product Number IXFH270 IXFH26 IXFH26 IXFH26
Package Tube Tube Tube Tube
Series HiperFET™, TrenchT3™ HiPerFET™ HiPerFET™, Polar HiPerFET™, Polar
Current - Continuous Drain (Id) @ 25°C 270A (Tc) 26A (Tc) 26A (Tc) 26A (Tc)
Drain to Source Voltage (Vdss) 60 V 500 V 600 V 500 V
Input Capacitance (Ciss) (Max) @ Vds 12600 pF @ 25 V 4200 pF @ 25 V 4150 pF @ 25 V 3600 pF @ 25 V
Supplier Device Package TO-247 (IXTH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH)
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Type N-Channel N-Channel N-Channel N-Channel
Rds On (Max) @ Id, Vgs 3.1mOhm @ 100A, 10V 200mOhm @ 13A, 10V 270mOhm @ 500mA, 10V 230mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V 160 nC @ 10 V 72 nC @ 10 V 60 nC @ 10 V
Mounting Type Through Hole Through Hole Through Hole Through Hole
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 4mA 5V @ 4mA 5.5V @ 4mA
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Power Dissipation (Max) 480W (Tc) 300W (Tc) 460W (Tc) 400W (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Payment Support The payment method can be chosen from the methods shown below: Wire Transfer (T/T, Bank Transfer), Western Union, Credit card, PayPal.
Certifications & Memberships We strictly controls the quality of products, environment and services.Through the ISO certification of the third party. View More >

Brand introduction

IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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