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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFH35N30
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IXFH35N30IXYS MOSFET N-CH 300V 35A TO247AD
Part NumberIXFH35N30
PackageTO-247-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFH35N30
DescriptionMOSFET N-CH 300V 35A TO247AD
In stock3381
Data sheet
IXFH35N30.pdf
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  • Specifications
  • Product Details - IXFH35N30
  • IXFH35N30 Tech Specifications
    IXYS - IXFH35N30 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFH35N30
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4V @ 4mA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-247AD (IXFH)
    Series HiPerFET™
    Rds On (Max) @ Id, Vgs 100mOhm @ 500mA, 10V
    Power Dissipation (Max) 300W (Tc)
    Package / Case TO-247-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 300 V
    Current - Continuous Drain (Id) @ 25°C 35A (Tc)
    Base Product Number IXFH35
  • TheIXFH35N30is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 300V 35A TO247AD and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4V @ 4mA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFH35N30 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFH35N30 IXFH340N075T2 IXFH36N60X3 IXFH32N50Q
Part Number IXFH35N30 IXFH340N075T2 IXFH36N60X3 IXFH32N50Q
Manufacturer IXYS IXYS IXYS IXYS
Rds On (Max) @ Id, Vgs 100mOhm @ 500mA, 10V 3.2mOhm @ 100A, 10V 90mOhm @ 18A, 10V 160mOhm @ 16A, 10V
Package Tube Tube Tube Tube
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Base Product Number IXFH35 IXFH340 IXFH36 IXFH32
Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 25 V 19000 pF @ 25 V 2030 pF @ 25 V 4925 pF @ 25 V
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 340A (Tc) 36A (Tc) 32A (Tc)
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V 300 nC @ 10 V 29 nC @ 10 V 190 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
FET Feature - - - -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Power Dissipation (Max) 300W (Tc) 935W (Tc) 446W (Tc) 360W (Tc)
Supplier Device Package TO-247AD (IXFH) TO-247AD (IXFH) TO-247 TO-247AD (IXFH)
Vgs(th) (Max) @ Id 4V @ 4mA 4V @ 3mA 5V @ 2.5mA 4.5V @ 4mA
Vgs (Max) ±20V ±20V ±20V ±20V
FET Type N-Channel N-Channel N-Channel N-Channel
Mounting Type Through Hole Through Hole Through Hole Through Hole
Series HiPerFET™ HiPerFET™, TrenchT2™ HiPerFET™, Ultra X3 HiPerFET™
Drain to Source Voltage (Vdss) 300 V 75 V 600 V 500 V
  • IXYS Related Products
  • IXFH35N30 Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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