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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFH52N30Q
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IXFH52N30QIXYS MOSFET N-CH 300V 52A TO247AD
Part NumberIXFH52N30Q
PackageTO-247-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFH52N30Q
DescriptionMOSFET N-CH 300V 52A TO247AD
In stock2276
Data sheet
IXFH52N30Q.pdf
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  • Specifications
  • Product Details - IXFH52N30Q
  • IXFH52N30Q Tech Specifications
    IXYS - IXFH52N30Q technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFH52N30Q
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4V @ 4mA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-247AD (IXFH)
    Series HiPerFET™, Q Class
    Rds On (Max) @ Id, Vgs 60mOhm @ 500mA, 10V
    Power Dissipation (Max) 360W (Tc)
    Package / Case TO-247-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 5300 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 300 V
    Current - Continuous Drain (Id) @ 25°C 52A (Tc)
    Base Product Number IXFH52
  • TheIXFH52N30Qis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 300V 52A TO247AD and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4V @ 4mA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFH52N30Q or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFH52N30Q IXFH50N20 IXFH58N20 IXFH60N50P3
Part Number IXFH52N30Q IXFH50N20 IXFH58N20 IXFH60N50P3
Manufacturer IXYS IXYS IXYS IXYS
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Power Dissipation (Max) 360W (Tc) 300W (Tc) 300W (Tc) 1040W (Tc)
Vgs(th) (Max) @ Id 4V @ 4mA 4V @ 4mA 4V @ 4mA 5V @ 4mA
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Mounting Type Through Hole Through Hole Through Hole Through Hole
FET Feature - - - -
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V 220 nC @ 10 V 220 nC @ 10 V 96 nC @ 10 V
Package Tube Tube Tube Tube
Supplier Device Package TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH)
Input Capacitance (Ciss) (Max) @ Vds 5300 pF @ 25 V 4400 pF @ 25 V 4400 pF @ 25 V 6250 pF @ 25 V
Vgs (Max) ±20V ±20V ±20V ±30V
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 52A (Tc) 50A (Tc) 58A (Tc) 60A (Tc)
Rds On (Max) @ Id, Vgs 60mOhm @ 500mA, 10V 45mOhm @ 25A, 10V 40mOhm @ 29A, 10V 100mOhm @ 30A, 10V
Series HiPerFET™, Q Class HiPerFET™ HiPerFET™ HiPerFET™, Polar3™
Drain to Source Voltage (Vdss) 300 V 200 V 200 V 500 V
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Base Product Number IXFH52 IXFH50 IXFH58 IXFH60
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  • IXFH52N30Q Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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