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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFH60N60X
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IXFH60N60XIXYS MOSFET N-CH 600V 60A TO247
Part NumberIXFH60N60X
PackageTO-247-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFH60N60X
DescriptionMOSFET N-CH 600V 60A TO247
In stock1925
Data sheet
IXFH60N60X.pdf
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  • Specifications
  • Product Details - IXFH60N60X
  • IXFH60N60X Tech Specifications
    IXYS - IXFH60N60X technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFH60N60X
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4.5V @ 8mA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-247 (IXTH)
    Series HiPerFET™, Ultra X
    Rds On (Max) @ Id, Vgs 55mOhm @ 30A, 10V
    Power Dissipation (Max) 890W (Tc)
    Package / Case TO-247-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 5800 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 143 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 600 V
    Current - Continuous Drain (Id) @ 25°C 60A (Tc)
    Base Product Number IXFH60
  • TheIXFH60N60Xis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 600V 60A TO247 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4.5V @ 8mA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFH60N60X or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFH60N60X IXFH60N25Q IXFH60N60X3 IXFH58N20
Part Number IXFH60N60X IXFH60N25Q IXFH60N60X3 IXFH58N20
Manufacturer IXYS IXYS IXYS IXYS
Series HiPerFET™, Ultra X HiPerFET™ HiPerFET™, Ultra X3 HiPerFET™
Vgs(th) (Max) @ Id 4.5V @ 8mA 4V @ 4mA 5V @ 4mA 4V @ 4mA
Vgs (Max) ±30V ±20V ±20V ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
FET Feature - - - -
Supplier Device Package TO-247 (IXTH) TO-247AD (IXFH) TO-247 TO-247AD (IXFH)
Gate Charge (Qg) (Max) @ Vgs 143 nC @ 10 V 180 nC @ 10 V 51 nC @ 10 V 220 nC @ 10 V
Base Product Number IXFH60 IXFH60 IXFH60 IXFH58
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Input Capacitance (Ciss) (Max) @ Vds 5800 pF @ 25 V 5100 pF @ 25 V 3450 pF @ 25 V 4400 pF @ 25 V
Package Tube Tube Tube Tube
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 600 V 250 V 600 V 200 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 60A (Tc) 60A (Tc) 58A (Tc)
Rds On (Max) @ Id, Vgs 55mOhm @ 30A, 10V 47mOhm @ 500mA, 10V 51mOhm @ 30A, 10V 40mOhm @ 29A, 10V
Power Dissipation (Max) 890W (Tc) 360W (Tc) 625W (Tc) 300W (Tc)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Type N-Channel N-Channel N-Channel N-Channel
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  • IXFH60N60X Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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