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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFH67N10Q
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IXFH67N10QIXYS MOSFET N-CH 100V 67A TO247AD
Part NumberIXFH67N10Q
PackageTO-247-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFH67N10Q
DescriptionMOSFET N-CH 100V 67A TO247AD
In stock4200
Data sheet
1.IXFH67N10Q.pdf 2.IXFH67N10Q.pdf
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  • Specifications
  • Product Details - IXFH67N10Q
  • IXFH67N10Q Tech Specifications
    IXYS - IXFH67N10Q technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFH67N10Q
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4V @ 4mA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-247AD (IXFH)
    Series HiPerFET™
    Rds On (Max) @ Id, Vgs 25mOhm @ 33.5A, 10V
    Power Dissipation (Max) 300W (Tc)
    Package / Case TO-247-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 260 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 100 V
    Current - Continuous Drain (Id) @ 25°C 67A (Tc)
    Base Product Number IXFH67
  • TheIXFH67N10Qis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 100V 67A TO247AD and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4V @ 4mA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFH67N10Q or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFH67N10Q IXFH69N30P IXFH6N120 IXFH6N100
Part Number IXFH67N10Q IXFH69N30P IXFH6N120 IXFH6N100
Manufacturer IXYS IXYS IXYS IXYS
Series HiPerFET™ HiPerFET™, Polar HiPerFET™ HiPerFET™
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 25mOhm @ 33.5A, 10V 49mOhm @ 500mA, 10V 2.6Ohm @ 3A, 10V 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 4mA 5V @ 4mA 5V @ 2.5mA 4.5V @ 2.5mA
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Current - Continuous Drain (Id) @ 25°C 67A (Tc) 69A (Tc) 6A (Tc) 6A (Tc)
Package Tube Box Tube Tube
Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 25 V 4960 pF @ 25 V 1950 pF @ 25 V 2600 pF @ 25 V
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 300 V 1200 V 1000 V
Power Dissipation (Max) 300W (Tc) 500W (Tc) 300W (Tc) 180W (Tc)
Vgs (Max) ±20V ±20V ±20V ±20V
FET Feature - - - -
Supplier Device Package TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH)
Base Product Number IXFH67 IXFH69 IXFH6 IXFH6
Mounting Type Through Hole Through Hole Through Hole Through Hole
FET Type N-Channel N-Channel N-Channel N-Channel
Gate Charge (Qg) (Max) @ Vgs 260 nC @ 10 V 180 nC @ 10 V 56 nC @ 10 V 130 nC @ 10 V
  • IXYS Related Products
  • IXFH67N10Q Download Datasheets (2)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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