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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFH69N30P
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IXFH69N30PIXYS MOSFET N-CH 300V 69A TO247AD
Part NumberIXFH69N30P
PackageTO-247-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFH69N30P
DescriptionMOSFET N-CH 300V 69A TO247AD
In stock3474
Data sheet
IXFH69N30P.pdf
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  • Specifications
  • Product Details - IXFH69N30P
  • IXFH69N30P Tech Specifications
    IXYS - IXFH69N30P technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFH69N30P
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5V @ 4mA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-247AD (IXFH)
    Series HiPerFET™, Polar
    Rds On (Max) @ Id, Vgs 49mOhm @ 500mA, 10V
    Power Dissipation (Max) 500W (Tc)
    Package / Case TO-247-3
    Package Box
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 4960 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 300 V
    Current - Continuous Drain (Id) @ 25°C 69A (Tc)
    Base Product Number IXFH69
  • TheIXFH69N30Pis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 300V 69A TO247AD and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5V @ 4mA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFH69N30P or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFH69N30P IXFH6N90 IXFH70N15 IXFH60N65X2-4
Part Number IXFH69N30P IXFH6N90 IXFH70N15 IXFH60N65X2-4
Manufacturer IXYS IXYS IXYS IXYS
Vgs(th) (Max) @ Id 5V @ 4mA 4.5V @ 2.5mA 4V @ 4mA 5V @ 4mA
Current - Continuous Drain (Id) @ 25°C 69A (Tc) 6A (Tc) 70A (Tc) 60A (Tc)
FET Type N-Channel N-Channel N-Channel N-Channel
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package Box Tube Tube Tube
Rds On (Max) @ Id, Vgs 49mOhm @ 500mA, 10V 2Ohm @ 3A, 10V 28mOhm @ 35A, 10V 52mOhm @ 30A, 10V
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Power Dissipation (Max) 500W (Tc) 300W (Tc) 300W (Tc) 780W (Tc)
Series HiPerFET™, Polar HiPerFET™ HiPerFET™ HiPerFET™, Ultra X2
Input Capacitance (Ciss) (Max) @ Vds 4960 pF @ 25 V 2600 pF @ 25 V 3600 pF @ 25 V 6300 pF @ 25 V
Base Product Number IXFH69 IXFH6 IXFH70 IXFH60
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Drain to Source Voltage (Vdss) 300 V 900 V 150 V 650 V
Supplier Device Package TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247-4L
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 130 nC @ 10 V 180 nC @ 10 V 108 nC @ 10 V
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Vgs (Max) ±20V ±20V ±20V ±30V
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-4
FET Feature - - - -
  • IXYS Related Products
  • IXFH69N30P Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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