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IXFH80N10IXYS MOSFET N-CH 100V 80A TO247AD
Part NumberIXFH80N10
PackageTO-247-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFH80N10
DescriptionMOSFET N-CH 100V 80A TO247AD
In stock4182
Data sheet
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  • Specifications
  • Product Details - IXFH80N10
  • IXFH80N10 Tech Specifications
    IXYS - IXFH80N10 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFH80N10
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4V @ 4mA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-247AD (IXFH)
    Series HiPerFET™
    Rds On (Max) @ Id, Vgs 12.5mOhm @ 40A, 10V
    Power Dissipation (Max) 300W (Tc)
    Package / Case TO-247-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 100 V
    Current - Continuous Drain (Id) @ 25°C 80A (Tc)
    Base Product Number IXFH80
  • TheIXFH80N10is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 100V 80A TO247AD and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4V @ 4mA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFH80N10 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFH80N10 IXFH76N07-11 IXFH7N80 IXFH80N06
Part Number IXFH80N10 IXFH76N07-11 IXFH7N80 IXFH80N06
Manufacturer IXYS IXYS IXYS IXYS
Vgs(th) (Max) @ Id 4V @ 4mA 3.4V @ 4mA 4.5V @ 2.5mA -
Base Product Number IXFH80 IXFH76 IXFH7 IXFH80
Rds On (Max) @ Id, Vgs 12.5mOhm @ 40A, 10V 11mOhm @ 40A, 10V 1.4Ohm @ 3.5A, 10V -
Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 25 V 4400 pF @ 25 V 2800 pF @ 25 V -
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Supplier Device Package TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH)
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 240 nC @ 10 V 130 nC @ 10 V -
FET Feature - - - -
FET Type N-Channel N-Channel N-Channel N-Channel
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -
Drain to Source Voltage (Vdss) 100 V 70 V 800 V 60 V
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Power Dissipation (Max) 300W (Tc) 360W (Tc) 180W (Tc) -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Series HiPerFET™ HiPerFET™ HiPerFET™ -
Vgs (Max) ±20V ±20V ±20V ±20V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 76A (Tc) 7A (Tc) 80A (Tc)
Package Tube Tube Tube Tube
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Certifications & Memberships We strictly controls the quality of products, environment and services.Through the ISO certification of the third party. View More >

Brand introduction

IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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