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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFH8N80
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IXFH8N80IXYS MOSFET N-CH 800V 8A TO247AD
Part NumberIXFH8N80
PackageTO-247-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFH8N80
DescriptionMOSFET N-CH 800V 8A TO247AD
In stock3433
Data sheet
IXFH8N80.pdf
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  • Specifications
  • Product Details - IXFH8N80
  • IXFH8N80 Tech Specifications
    IXYS - IXFH8N80 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFH8N80
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4.5V @ 2.5mA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-247AD (IXFH)
    Series HiPerFET™
    Rds On (Max) @ Id, Vgs 1.1Ohm @ 4A, 10V
    Power Dissipation (Max) 180W (Tc)
    Package / Case TO-247-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 800 V
    Current - Continuous Drain (Id) @ 25°C 8A (Tc)
    Base Product Number IXFH8
  • TheIXFH8N80is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 800V 8A TO247AD and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4.5V @ 2.5mA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFH8N80 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFH8N80 IXFH80N10Q IXFH88N30P IXFH90N65X3
Part Number IXFH8N80 IXFH80N10Q IXFH88N30P IXFH90N65X3
Manufacturer IXYS IXYS IXYS IXYS
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 25 V 4500 pF @ 25 V 6300 pF @ 25 V 6080 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
FET Feature - - - -
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package Tube Tube Box Tube
Base Product Number IXFH8 IXFH80 IXFH88 IXFH90
Drain to Source Voltage (Vdss) 800 V 100 V 300 V 650 V
Rds On (Max) @ Id, Vgs 1.1Ohm @ 4A, 10V 15mOhm @ 40A, 10V 40mOhm @ 44A, 10V 33mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 80A (Tc) 88A (Tc) 90A (Tc)
Supplier Device Package TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247 (IXFH)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id 4.5V @ 2.5mA 4V @ 4mA 5V @ 4mA 5.2V @ 4mA
Mounting Type Through Hole Through Hole Through Hole Through Hole
Power Dissipation (Max) 180W (Tc) 360W (Tc) 600W (Tc) 960W (Tc)
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V 180 nC @ 10 V 180 nC @ 10 V 95 nC @ 10 V
FET Type N-Channel N-Channel N-Channel N-Channel
Vgs (Max) ±20V ±20V ±20V ±20V
Series HiPerFET™ HiPerFET™ HiPerFET™, Polar HiPerFET™, Ultra X3
  • IXYS Related Products
  • IXFH8N80 Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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