Name: IXYS IXFH9N80Q
Brand: IXYS
SKU: IXFH9N80Q
Availability: InStock

Specifications
Product Details - IXFH9N80Q

IXFH9N80Q Tech Specifications
IXYS - IXFH9N80Q technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFH9N80Q

Manufacturer IXYS / Littelfuse

Vgs(th) (Max) @ Id 5V @ 2.5mA

Vgs (Max) ±20V

Technology MOSFET (Metal Oxide)

Supplier Device Package TO-247AD (IXFH)

Series HiPerFET™, Q Class

Rds On (Max) @ Id, Vgs 1.1Ohm @ 500mA, 10V

Power Dissipation (Max) 180W (Tc)

Package / Case TO-247-3

Package Tube

Operating Temperature -55°C ~ 150°C (TJ)

Mounting Type Through Hole

Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V

FET Type N-Channel

FET Feature -

Drive Voltage (Max Rds On, Min Rds On) 10V

Drain to Source Voltage (Vdss) 800 V

Current - Continuous Drain (Id) @ 25°C 9A (Tc)

Base Product Number IXFH9
TheIXFH9N80Qis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 800V 9A TO247AD and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5V @ 2.5mA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFH9N80Q or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute
Part Number	IXFH9N80Q	IXFJ52N30Q	IXFH88N30P	IXFJ15N100Q
Manufacturer	IXYS	IXYS	IXYS	IXYS
Technology	MOSFET (Metal Oxide)	-	MOSFET (Metal Oxide)	-
Input Capacitance (Ciss) (Max) @ Vds	2200 pF @ 25 V	-	6300 pF @ 25 V	-
Package / Case	TO-247-3	-	TO-247-3	-
Drive Voltage (Max Rds On, Min Rds On)	10V	-	10V	-
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 10 V	-	180 nC @ 10 V	-
Power Dissipation (Max)	180W (Tc)	-	600W (Tc)	-
Mounting Type	Through Hole	-	Through Hole	-
Supplier Device Package	TO-247AD (IXFH)	-	TO-247AD (IXFH)	-
Vgs(th) (Max) @ Id	5V @ 2.5mA	-	5V @ 4mA	-
Current - Continuous Drain (Id) @ 25°C	9A (Tc)	-	88A (Tc)	-
Base Product Number	IXFH9	IXFJ52	IXFH88	IXFJ15
FET Feature	-	-	-	-
Vgs (Max)	±20V	-	±20V	-
FET Type	N-Channel	-	N-Channel	-
Operating Temperature	-55°C ~ 150°C (TJ)	-	-55°C ~ 150°C (TJ)	-
Drain to Source Voltage (Vdss)	800 V	-	300 V	-
Rds On (Max) @ Id, Vgs	1.1Ohm @ 500mA, 10V	-	40mOhm @ 44A, 10V	-
Package	Tube	Tube	Box	Tube
Series	HiPerFET™, Q Class	-	HiPerFET™, Polar	-

Brand introduction

IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

IXYS / Littelfuse

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