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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFJ20N85X
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IXFJ20N85XIXYS MOSFET N-CH 850V 9.5A ISO TO247
Part NumberIXFJ20N85X
PackageTO-247-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFJ20N85X
DescriptionMOSFET N-CH 850V 9.5A ISO TO247
In stock2308
Data sheet
IXFJ20N85X.pdf
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  • Specifications
  • Product Details - IXFJ20N85X
  • IXFJ20N85X Tech Specifications
    IXYS - IXFJ20N85X technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFJ20N85X
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5.5V @ 2.5mA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package ISO TO-247-3
    Series HiPerFET™, Ultra X
    Rds On (Max) @ Id, Vgs 360mOhm @ 10A, 10V
    Power Dissipation (Max) 110W (Tc)
    Package / Case TO-247-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 1660 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 850 V
    Current - Continuous Drain (Id) @ 25°C 9.5A (Tc)
    Base Product Number IXFJ20
  • TheIXFJ20N85Xis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 850V 9.5A ISO TO247 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5.5V @ 2.5mA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFJ20N85X or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFJ20N85X IXFH98N60X3 IXFK100N10 IXFJ80N20Q
Part Number IXFJ20N85X IXFH98N60X3 IXFK100N10 IXFJ80N20Q
Manufacturer IXYS IXYS IXYS IXYS
Mounting Type Through Hole Through Hole Through Hole -
FET Feature - - - -
Current - Continuous Drain (Id) @ 25°C 9.5A (Tc) 98A (Tc) 100A (Tc) -
Vgs (Max) ±30V ±20V ±20V -
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V -
Supplier Device Package ISO TO-247-3 TO-247 (IXTH) TO-264AA (IXFK) -
Series HiPerFET™, Ultra X HiPerFET™, Ultra X3 HiPerFET™ -
Rds On (Max) @ Id, Vgs 360mOhm @ 10A, 10V 30mOhm @ 49A, 10V 12mOhm @ 75A, 10V -
FET Type N-Channel N-Channel N-Channel -
Power Dissipation (Max) 110W (Tc) 960W (Tc) 500W (Tc) -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Package / Case TO-247-3 TO-247-3 TO-264-3, TO-264AA -
Input Capacitance (Ciss) (Max) @ Vds 1660 pF @ 25 V 6250 pF @ 25 V 9000 pF @ 25 V -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Base Product Number IXFJ20 IXFH98 IXFK100 IXFJ80
Package Tube Tube Tube Tube
Vgs(th) (Max) @ Id 5.5V @ 2.5mA 5V @ 4mA 4V @ 8mA -
Drain to Source Voltage (Vdss) 850 V 600 V 100 V -
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V 90 nC @ 10 V 360 nC @ 10 V -
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  • IXFJ20N85X Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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