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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFJ26N50P3
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IXFJ26N50P3IXYS MOSFET N-CH 500V 14A TO247
Part NumberIXFJ26N50P3
PackageTO-247-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFJ26N50P3
DescriptionMOSFET N-CH 500V 14A TO247
In stock1796
Data sheet
IXFJ26N50P3.pdf
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  • Specifications
  • Product Details - IXFJ26N50P3
  • IXFJ26N50P3 Tech Specifications
    IXYS - IXFJ26N50P3 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFJ26N50P3
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5V @ 4mA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-247 (IXTH)
    Series HiPerFET™, Polar3™
    Rds On (Max) @ Id, Vgs 265mOhm @ 13A, 10V
    Power Dissipation (Max) 180W (Tc)
    Package / Case TO-247-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 2220 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 500 V
    Current - Continuous Drain (Id) @ 25°C 14A (Tc)
    Base Product Number IXFJ26
  • TheIXFJ26N50P3is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 500V 14A TO247 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5V @ 4mA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFJ26N50P3 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFJ26N50P3 IXFJ40N30 IXFH94N30T IXFI7N80P
Part Number IXFJ26N50P3 IXFJ40N30 IXFH94N30T IXFI7N80P
Manufacturer IXYS IXYS IXYS IXYS
Package Tube Tube Tube Tube
FET Feature - - - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 2220 pF @ 25 V 4800 pF @ 25 V 11400 pF @ 25 V 1890 pF @ 25 V
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Supplier Device Package TO-247 (IXTH) TO-268 TO-247AD (IXFH) TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Package / Case TO-247-3 TO-220-3, Short Tab TO-247-3 TO-262-3 Long Leads, I²Pak, TO-262AA
FET Type N-Channel N-Channel N-Channel N-Channel
Current - Continuous Drain (Id) @ 25°C 14A (Tc) 40A (Tc) 94A (Tc) 7A (Tc)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Vgs (Max) ±30V ±20V ±20V ±30V
Base Product Number IXFJ26 IXFJ40 IXFH94 IXFI7
Power Dissipation (Max) 180W (Tc) 300W (Tc) 890W (Tc) 200W (Tc)
Series HiPerFET™, Polar3™ HiPerFET™ HiPerFET™, Trench HiPerFET™, PolarHT™
Drain to Source Voltage (Vdss) 500 V 300 V 300 V 800 V
Vgs(th) (Max) @ Id 5V @ 4mA 4V @ 4mA 5V @ 4mA 5V @ 1mA
Rds On (Max) @ Id, Vgs 265mOhm @ 13A, 10V 80mOhm @ 20A, 10V 36mOhm @ 47A, 10V 1.44Ohm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V 200 nC @ 10 V 190 nC @ 10 V 32 nC @ 10 V
  • IXYS Related Products
  • IXFJ26N50P3 Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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