Name: IXYS IXFJ32N50Q
Brand: IXYS
SKU: IXFJ32N50Q
Availability: InStock

Specifications
Product Details - IXFJ32N50Q

IXFJ32N50Q Tech Specifications
IXYS - IXFJ32N50Q technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFJ32N50Q

Manufacturer IXYS / Littelfuse

Vgs(th) (Max) @ Id 4V @ 4mA

Vgs (Max) ±20V

Technology MOSFET (Metal Oxide)

Supplier Device Package TO-268

Series HiPerFET™

Rds On (Max) @ Id, Vgs 150mOhm @ 16A, 10V

Power Dissipation (Max) 360W (Tc)

Package / Case TO-220-3, Short Tab

Package Tube

Operating Temperature -55°C ~ 150°C (TJ)

Mounting Type Through Hole

Input Capacitance (Ciss) (Max) @ Vds 3950 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs 153 nC @ 10 V

FET Type N-Channel

FET Feature -

Drive Voltage (Max Rds On, Min Rds On) 10V

Drain to Source Voltage (Vdss) 500 V

Current - Continuous Drain (Id) @ 25°C 32A (Tc)

Base Product Number IXFJ32
TheIXFJ32N50Qis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 500V 32A TO268 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4V @ 4mA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFJ32N50Q or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute
Part Number	IXFJ32N50Q	IXFJ80N25X3	IXFJ15N100Q	IXFH9N80
Manufacturer	IXYS	IXYS	IXYS	IXYS
Base Product Number	IXFJ32	IXFJ80	IXFJ15	IXFH9
Package	Tube	Tube	Tube	Tube
Supplier Device Package	TO-268	ISO TO-247-3	-	TO-247AD (IXFH)
Current - Continuous Drain (Id) @ 25°C	32A (Tc)	44A (Tc)	-	9A (Tc)
Rds On (Max) @ Id, Vgs	150mOhm @ 16A, 10V	18mOhm @ 40A, 10V	-	900mOhm @ 500mA, 10V
Package / Case	TO-220-3, Short Tab	TO-247-3	-	TO-247-3
Input Capacitance (Ciss) (Max) @ Vds	3950 pF @ 25 V	5430 pF @ 25 V	-	2600 pF @ 25 V
Series	HiPerFET™	HiPerFET™, Ultra X3	-	HiPerFET™
Mounting Type	Through Hole	Through Hole	-	Through Hole
Vgs (Max)	±20V	±20V	-	±20V
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	-	MOSFET (Metal Oxide)
Power Dissipation (Max)	360W (Tc)	104W (Tc)	-	180W (Tc)
Drain to Source Voltage (Vdss)	500 V	250 V	-	800 V
Vgs(th) (Max) @ Id	4V @ 4mA	4.5V @ 1.5mA	-	4.5V @ 2.5mA
FET Feature	-	-	-	-
Gate Charge (Qg) (Max) @ Vgs	153 nC @ 10 V	83 nC @ 10 V	-	130 nC @ 10 V
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-	-55°C ~ 150°C (TJ)
FET Type	N-Channel	N-Channel	-	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	-	10V

Brand introduction

IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

IXYS / Littelfuse

Ixys-Electronics.com

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