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IXFJ40N30IXYS MOSFET N-CH 300V 40A TO268
Part NumberIXFJ40N30
PackageTO-220-3, Short Tab
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFJ40N30
DescriptionMOSFET N-CH 300V 40A TO268
In stock2867
Data sheet
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  • Specifications
  • Product Details - IXFJ40N30
  • IXFJ40N30 Tech Specifications
    IXYS - IXFJ40N30 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFJ40N30
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4V @ 4mA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-268
    Series HiPerFET™
    Rds On (Max) @ Id, Vgs 80mOhm @ 20A, 10V
    Power Dissipation (Max) 300W (Tc)
    Package / Case TO-220-3, Short Tab
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 300 V
    Current - Continuous Drain (Id) @ 25°C 40A (Tc)
    Base Product Number IXFJ40
  • TheIXFJ40N30is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 300V 40A TO268 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4V @ 4mA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFJ40N30 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFJ40N30 IXFK110N07 IXFJ20N85X IXFK102N30P
Part Number IXFJ40N30 IXFK110N07 IXFJ20N85X IXFK102N30P
Manufacturer IXYS IXYS IXYS IXYS
FET Feature - - - -
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 25 V 9000 pF @ 25 V 1660 pF @ 25 V 7500 pF @ 25 V
Package Tube Tube Tube Box
Series HiPerFET™ HiPerFET™ HiPerFET™, Ultra X HiPerFET™, Polar
Vgs(th) (Max) @ Id 4V @ 4mA 4V @ 8mA 5.5V @ 2.5mA 5V @ 4mA
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Package / Case TO-220-3, Short Tab TO-264-3, TO-264AA TO-247-3 TO-264-3, TO-264AA
Supplier Device Package TO-268 TO-264AA (IXFK) ISO TO-247-3 TO-264AA (IXFK)
Mounting Type Through Hole Through Hole Through Hole Through Hole
FET Type N-Channel N-Channel N-Channel N-Channel
Drain to Source Voltage (Vdss) 300 V 70 V 850 V 300 V
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Power Dissipation (Max) 300W (Tc) 500W (Tc) 110W (Tc) 700W (Tc)
Base Product Number IXFJ40 IXFK110 IXFJ20 IXFK102
Current - Continuous Drain (Id) @ 25°C 40A (Tc) 110A (Tc) 9.5A (Tc) 102A (Tc)
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V 480 nC @ 10 V 63 nC @ 10 V 224 nC @ 10 V
Rds On (Max) @ Id, Vgs 80mOhm @ 20A, 10V 6mOhm @ 55A, 10V 360mOhm @ 10A, 10V 33mOhm @ 500mA, 10V
Vgs (Max) ±20V ±20V ±30V ±20V
Payment Support The payment method can be chosen from the methods shown below: Wire Transfer (T/T, Bank Transfer), Western Union, Credit card, PayPal.
Certifications & Memberships We strictly controls the quality of products, environment and services.Through the ISO certification of the third party. View More >

Brand introduction

IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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