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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFJ80N25X3
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IXFJ80N25X3IXYS MOSFET N-CH 250V 44A ISO TO247-3
Part NumberIXFJ80N25X3
PackageTO-247-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFJ80N25X3
DescriptionMOSFET N-CH 250V 44A ISO TO247-3
In stock2938
Data sheet
IXFJ80N25X3.pdf
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  • Specifications
  • Product Details - IXFJ80N25X3
  • IXFJ80N25X3 Tech Specifications
    IXYS - IXFJ80N25X3 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFJ80N25X3
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4.5V @ 1.5mA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package ISO TO-247-3
    Series HiPerFET™, Ultra X3
    Rds On (Max) @ Id, Vgs 18mOhm @ 40A, 10V
    Power Dissipation (Max) 104W (Tc)
    Package / Case TO-247-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 5430 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 83 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 250 V
    Current - Continuous Drain (Id) @ 25°C 44A (Tc)
    Base Product Number IXFJ80
  • TheIXFJ80N25X3is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 250V 44A ISO TO247-3 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4.5V @ 1.5mA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFJ80N25X3 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFJ80N25X3 IXFK120N25P IXFK102N30P IXFJ80N20Q
Part Number IXFJ80N25X3 IXFK120N25P IXFK102N30P IXFJ80N20Q
Manufacturer IXYS IXYS IXYS IXYS
Series HiPerFET™, Ultra X3 HiPerFET™, Polar HiPerFET™, Polar -
Vgs(th) (Max) @ Id 4.5V @ 1.5mA 5V @ 4mA 5V @ 4mA -
FET Type N-Channel N-Channel N-Channel -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -
Gate Charge (Qg) (Max) @ Vgs 83 nC @ 10 V 185 nC @ 10 V 224 nC @ 10 V -
Rds On (Max) @ Id, Vgs 18mOhm @ 40A, 10V 24mOhm @ 60A, 10V 33mOhm @ 500mA, 10V -
FET Feature - - - -
Mounting Type Through Hole Through Hole Through Hole -
Package Tube Tube Box Tube
Base Product Number IXFJ80 IXFK120 IXFK102 IXFJ80
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V -
Supplier Device Package ISO TO-247-3 TO-264AA (IXFK) TO-264AA (IXFK) -
Vgs (Max) ±20V ±20V ±20V -
Current - Continuous Drain (Id) @ 25°C 44A (Tc) 120A (Tc) 102A (Tc) -
Drain to Source Voltage (Vdss) 250 V 250 V 300 V -
Package / Case TO-247-3 TO-264-3, TO-264AA TO-264-3, TO-264AA -
Power Dissipation (Max) 104W (Tc) 700W (Tc) 700W (Tc) -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Input Capacitance (Ciss) (Max) @ Vds 5430 pF @ 25 V 8000 pF @ 25 V 7500 pF @ 25 V -
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  • IXFJ80N25X3 Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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