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IXFK120N30TIXYS MOSFET N-CH 300V 120A TO264AA
Part NumberIXFK120N30T
PackageTO-264-3, TO-264AA
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFK120N30T
DescriptionMOSFET N-CH 300V 120A TO264AA
In stock1646
Data sheet
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  • Specifications
  • Product Details - IXFK120N30T
  • IXFK120N30T Tech Specifications
    IXYS - IXFK120N30T technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFK120N30T
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5V @ 4mA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-264AA (IXFK)
    Series HiPerFET™, Trench
    Rds On (Max) @ Id, Vgs 24mOhm @ 60A, 10V
    Power Dissipation (Max) 960W (Tc)
    Package / Case TO-264-3, TO-264AA
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 20000 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 265 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 300 V
    Current - Continuous Drain (Id) @ 25°C 120A (Tc)
    Base Product Number IXFK120
  • TheIXFK120N30Tis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 300V 120A TO264AA and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5V @ 4mA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFK120N30T or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFK120N30T IXFK120N60X3 IXFK100N25 IXFK110N07
Part Number IXFK120N30T IXFK120N60X3 IXFK100N25 IXFK110N07
Manufacturer IXYS IXYS IXYS IXYS
FET Feature - - - -
Drain to Source Voltage (Vdss) 300 V - 250 V 70 V
Supplier Device Package TO-264AA (IXFK) - TO-264AA (IXFK) TO-264AA (IXFK)
Base Product Number IXFK120 IXFK120 IXFK100 IXFK110
Vgs (Max) ±20V - ±20V ±20V
Power Dissipation (Max) 960W (Tc) - 560W (Tc) 500W (Tc)
Series HiPerFET™, Trench - HiPerFET™ HiPerFET™
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id 5V @ 4mA - 4V @ 8mA 4V @ 8mA
Package / Case TO-264-3, TO-264AA - TO-264-3, TO-264AA TO-264-3, TO-264AA
Gate Charge (Qg) (Max) @ Vgs 265 nC @ 10 V - 300 nC @ 10 V 480 nC @ 10 V
Package Tube Tube Tube Tube
Current - Continuous Drain (Id) @ 25°C 120A (Tc) - 100A (Tc) 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 60A, 10V - 27mOhm @ 50A, 10V 6mOhm @ 55A, 10V
Input Capacitance (Ciss) (Max) @ Vds 20000 pF @ 25 V - 9100 pF @ 25 V 9000 pF @ 25 V
FET Type N-Channel - N-Channel N-Channel
Mounting Type Through Hole - Through Hole Through Hole
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Certifications & Memberships We strictly controls the quality of products, environment and services.Through the ISO certification of the third party. View More >

Brand introduction

IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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