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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFK20N120P
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IXFK20N120PIXYS MOSFET N-CH 1200V 20A TO264AA
Part NumberIXFK20N120P
PackageTO-264-3, TO-264AA
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFK20N120P
DescriptionMOSFET N-CH 1200V 20A TO264AA
In stock32465
Data sheet
IXFK20N120P.pdf
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  • Specifications
  • Product Details - IXFK20N120P
  • IXFK20N120P Tech Specifications
    IXYS - IXFK20N120P technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFK20N120P
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 6.5V @ 1mA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-264AA (IXFK)
    Series HiPerFET™, Polar
    Rds On (Max) @ Id, Vgs 570mOhm @ 10A, 10V
    Power Dissipation (Max) 780W (Tc)
    Package / Case TO-264-3, TO-264AA
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 11100 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 193 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 1200 V
    Current - Continuous Drain (Id) @ 25°C 20A (Tc)
    Base Product Number IXFK20
  • TheIXFK20N120Pis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 1200V 20A TO264AA and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 6.5V @ 1mA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFK20N120P or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFK20N120P IXFK170N20T IXFK21N100Q IXFK180N10
Part Number IXFK20N120P IXFK170N20T IXFK21N100Q IXFK180N10
Manufacturer IXYS IXYS IXYS IXYS
Power Dissipation (Max) 780W (Tc) 1150W (Tc) 500W (Tc) 560W (Tc)
Vgs (Max) ±30V ±20V ±20V ±20V
Package Tube Tube Tube Tube
Input Capacitance (Ciss) (Max) @ Vds 11100 pF @ 25 V 19600 pF @ 25 V 6900 pF @ 25 V 10900 pF @ 25 V
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA TO-264-3, TO-264AA TO-264-3, TO-264AA
Supplier Device Package TO-264AA (IXFK) TO-264AA (IXFK) TO-264AA (IXFK) TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Base Product Number IXFK20 IXFK170 IXFK21 IXFK180
Mounting Type Through Hole Through Hole Through Hole Through Hole
FET Feature - - - -
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 170A (Tc) 21A (Tc) 180A (Tc)
Gate Charge (Qg) (Max) @ Vgs 193 nC @ 10 V 265 nC @ 10 V 170 nC @ 10 V 390 nC @ 10 V
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Type N-Channel N-Channel N-Channel N-Channel
Vgs(th) (Max) @ Id 6.5V @ 1mA 5V @ 4mA 5.5V @ 4mA 4V @ 8mA
Series HiPerFET™, Polar HiPerFET™, Trench HiPerFET™, Q Class HiPerFET™
Drain to Source Voltage (Vdss) 1200 V 200 V 1000 V 100 V
Rds On (Max) @ Id, Vgs 570mOhm @ 10A, 10V 11mOhm @ 60A, 10V 500mOhm @ 10.5A, 10V 8mOhm @ 90A, 10V
  • IXYS Related Products
  • IXFK20N120P Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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