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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFK21N100F
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IXFK21N100FIXYS MOSFET N-CH 1000V 21A TO264
Part NumberIXFK21N100F
PackageTO-264-3, TO-264AA
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFK21N100F
DescriptionMOSFET N-CH 1000V 21A TO264
In stock3317
Data sheet
1.IXFK21N100F.pdf 2.IXFK21N100F.pdf
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  • Specifications
  • Product Details - IXFK21N100F
  • IXFK21N100F Tech Specifications
    IXYS - IXFK21N100F technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFK21N100F
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5.5V @ 4mA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-264AA
    Series HiPerRF™
    Rds On (Max) @ Id, Vgs 500mOhm @ 10.5A, 10V
    Power Dissipation (Max) 500W (Tc)
    Package / Case TO-264-3, TO-264AA
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 1000 V
    Current - Continuous Drain (Id) @ 25°C 21A (Tc)
    Base Product Number IXFK21
  • TheIXFK21N100Fis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 1000V 21A TO264 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5.5V @ 4mA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFK21N100F or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFK21N100F IXFK24N100Q3 IXFK240N15T2 IXFK24N100
Part Number IXFK21N100F IXFK24N100Q3 IXFK240N15T2 IXFK24N100
Manufacturer IXYS IXYS IXYS IXYS
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 150 V 1000 V
Rds On (Max) @ Id, Vgs 500mOhm @ 10.5A, 10V 440mOhm @ 12A, 10V 5.2mOhm @ 60A, 10V 390mOhm @ 12A, 10V
Vgs (Max) ±20V ±30V ±20V ±20V
Package Tube Tube Tube Tube
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA TO-264-3, TO-264AA TO-264-3, TO-264AA
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
FET Feature - - - -
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V 140 nC @ 10 V 460 nC @ 10 V 267 nC @ 10 V
Supplier Device Package TO-264AA TO-264AA (IXFK) TO-264AA (IXFK) TO-264AA (IXFK)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Power Dissipation (Max) 500W (Tc) 1000W (Tc) 1250W (Tc) 560W (Tc)
Vgs(th) (Max) @ Id 5.5V @ 4mA 6.5V @ 4mA 5V @ 8mA 5.5V @ 8mA
Series HiPerRF™ HiPerFET™, Q3 Class HiPerFET™, TrenchT2™ HiPerFET™
Base Product Number IXFK21 IXFK24 IXFK240 IXFK24
FET Type N-Channel N-Channel N-Channel N-Channel
Current - Continuous Drain (Id) @ 25°C 21A (Tc) 24A (Tc) 240A (Tc) 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 25 V 7200 pF @ 25 V 32000 pF @ 25 V 8700 pF @ 25 V
Mounting Type Through Hole Through Hole Through Hole Through Hole
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  • IXFK21N100F Download Datasheets (2)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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