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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFN120N65X2
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IXFN120N65X2IXYS MOSFET N-CH 650V 108A SOT227B
Part NumberIXFN120N65X2
PackageSOT-227-4, miniBLOC
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFN120N65X2
DescriptionMOSFET N-CH 650V 108A SOT227B
In stock27908
Data sheet
IXFN120N65X2.pdf
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  • Specifications
  • Product Details - IXFN120N65X2
  • IXFN120N65X2 Tech Specifications
    IXYS - IXFN120N65X2 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFN120N65X2
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5.5V @ 8mA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package SOT-227B
    Series HiPerFET™, Ultra X2
    Rds On (Max) @ Id, Vgs 24mOhm @ 54A, 10V
    Power Dissipation (Max) 890W (Tc)
    Package / Case SOT-227-4, miniBLOC
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Chassis Mount
    Input Capacitance (Ciss) (Max) @ Vds 15500 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 225 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 650 V
    Current - Continuous Drain (Id) @ 25°C 108A (Tc)
    Base Product Number IXFN120
  • TheIXFN120N65X2is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 650V 108A SOT227B and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5.5V @ 8mA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFN120N65X2 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFN120N65X2 IXFN100N65X2 IXFN120N60X3 IXFN130N30
Part Number IXFN120N65X2 IXFN100N65X2 IXFN120N60X3 IXFN130N30
Manufacturer IXYS IXYS IXYS IXYS
Vgs(th) (Max) @ Id 5.5V @ 8mA 5V @ 4mA - 4V @ 8mA
Base Product Number IXFN120 IXFN100 IXFN120 IXFN130
Drive Voltage (Max Rds On, Min Rds On) 10V 10V - 10V
Drain to Source Voltage (Vdss) 650 V 650 V - 300 V
Series HiPerFET™, Ultra X2 HiPerFET™, Ultra X2 - HiPerFET™
Current - Continuous Drain (Id) @ 25°C 108A (Tc) 78A (Tc) - 130A (Tc)
Rds On (Max) @ Id, Vgs 24mOhm @ 54A, 10V 30mOhm @ 50A, 10V - 22mOhm @ 500mA, 10V
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Vgs (Max) ±30V ±30V - ±20V
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Supplier Device Package SOT-227B SOT-227B - SOT-227B
FET Feature - - - -
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC - SOT-227-4, miniBLOC
Power Dissipation (Max) 890W (Tc) 595W (Tc) - 700W (Tc)
FET Type N-Channel N-Channel - N-Channel
Package Tube Tube Tube Tube
Gate Charge (Qg) (Max) @ Vgs 225 nC @ 10 V 183 nC @ 10 V - 380 nC @ 10 V
Mounting Type Chassis Mount Chassis Mount - Chassis Mount
Input Capacitance (Ciss) (Max) @ Vds 15500 pF @ 25 V 10800 pF @ 25 V - 14500 pF @ 25 V
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  • IXFN120N65X2 Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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