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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFN30N110P
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IXFN30N110PIXYS MOSFET N-CH 1100V 25A SOT-227B
Part NumberIXFN30N110P
PackageSOT-227-4, miniBLOC
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFN30N110P
DescriptionMOSFET N-CH 1100V 25A SOT-227B
In stock3197
Data sheet
IXFN30N110P.pdf
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  • Specifications
  • Product Details - IXFN30N110P
  • IXFN30N110P Tech Specifications
    IXYS - IXFN30N110P technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFN30N110P
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 6.5V @ 1mA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package SOT-227B
    Series HiPerFET™, Polar
    Rds On (Max) @ Id, Vgs 360mOhm @ 15A, 10V
    Power Dissipation (Max) 695W (Tc)
    Package / Case SOT-227-4, miniBLOC
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Chassis Mount
    Input Capacitance (Ciss) (Max) @ Vds 13600 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 235 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 1100 V
    Current - Continuous Drain (Id) @ 25°C 25A (Tc)
    Base Product Number IXFN30
  • TheIXFN30N110Pis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 1100V 25A SOT-227B and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 6.5V @ 1mA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFN30N110P or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFN30N110P IXFN320N17T2 IXFN32N120P IXFN32N60
Part Number IXFN30N110P IXFN320N17T2 IXFN32N120P IXFN32N60
Manufacturer IXYS IXYS IXYS IXYS
Rds On (Max) @ Id, Vgs 360mOhm @ 15A, 10V 5.2mOhm @ 60A, 10V 310mOhm @ 500mA, 10V 250mOhm @ 500mA, 10V
Power Dissipation (Max) 695W (Tc) 1070W (Tc) 1000W (Tc) 520AW (Tc)
FET Type N-Channel N-Channel N-Channel N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC
Input Capacitance (Ciss) (Max) @ Vds 13600 pF @ 25 V 45000 pF @ 25 V 21000 pF @ 25 V 9000 pF @ 25 V
Vgs (Max) ±30V ±20V ±30V ±20V
Current - Continuous Drain (Id) @ 25°C 25A (Tc) 260A (Tc) 32A (Tc) 32A (Tc)
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1100 V 170 V 1200 V 600 V
Series HiPerFET™, Polar HiPerFET™, TrenchT2™ HiPerFET™, Polar HiPerFET™
FET Feature - - - -
Vgs(th) (Max) @ Id 6.5V @ 1mA 5V @ 8mA 6.5V @ 1mA 4.5V @ 8mA
Package Tube Tube Tube Tube
Supplier Device Package SOT-227B SOT-227B SOT-227B SOT-227B
Base Product Number IXFN30 IXFN320 IXFN32 IXFN32
Mounting Type Chassis Mount Chassis Mount Chassis Mount Chassis Mount
Gate Charge (Qg) (Max) @ Vgs 235 nC @ 10 V 640 nC @ 10 V 360 nC @ 10 V 325 nC @ 10 V
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
  • IXYS Related Products
  • IXFN30N110P Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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