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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFN32N120P
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IXFN32N120PIXYS MOSFET N-CH 1200V 32A SOT-227B
Part NumberIXFN32N120P
PackageSOT-227-4, miniBLOC
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFN32N120P
DescriptionMOSFET N-CH 1200V 32A SOT-227B
In stock28824
Data sheet
IXFN32N120P.pdf
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  • Specifications
  • Product Details - IXFN32N120P
  • IXFN32N120P Tech Specifications
    IXYS - IXFN32N120P technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFN32N120P
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 6.5V @ 1mA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package SOT-227B
    Series HiPerFET™, Polar
    Rds On (Max) @ Id, Vgs 310mOhm @ 500mA, 10V
    Power Dissipation (Max) 1000W (Tc)
    Package / Case SOT-227-4, miniBLOC
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Chassis Mount
    Input Capacitance (Ciss) (Max) @ Vds 21000 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 360 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 1200 V
    Current - Continuous Drain (Id) @ 25°C 32A (Tc)
    Base Product Number IXFN32
  • TheIXFN32N120Pis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 1200V 32A SOT-227B and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 6.5V @ 1mA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFN32N120P or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFN32N120P IXFN32N60 IXFN300N10P IXFN360N15T2
Part Number IXFN32N120P IXFN32N60 IXFN300N10P IXFN360N15T2
Manufacturer IXYS IXYS IXYS IXYS
Package Tube Tube Tube Tube
Gate Charge (Qg) (Max) @ Vgs 360 nC @ 10 V 325 nC @ 10 V 279 nC @ 10 V 715 nC @ 10 V
Series HiPerFET™, Polar HiPerFET™ HiPerFET™, Polar HiPerFET™, TrenchT2™
FET Feature - - - -
Input Capacitance (Ciss) (Max) @ Vds 21000 pF @ 25 V 9000 pF @ 25 V 23000 pF @ 25 V 47500 pF @ 25 V
FET Type N-Channel N-Channel N-Channel N-Channel
Power Dissipation (Max) 1000W (Tc) 520AW (Tc) 1070W (Tc) 1070W (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Base Product Number IXFN32 IXFN32 IXFN300 IXFN360
Mounting Type Chassis Mount Chassis Mount Chassis Mount Chassis Mount
Drain to Source Voltage (Vdss) 1200 V 600 V 100 V 150 V
Vgs (Max) ±30V ±20V ±20V ±20V
Supplier Device Package SOT-227B SOT-227B SOT-227B SOT-227B
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC
Current - Continuous Drain (Id) @ 25°C 32A (Tc) 32A (Tc) 295A (Tc) 310A (Tc)
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 310mOhm @ 500mA, 10V 250mOhm @ 500mA, 10V 5.5mOhm @ 50A, 10V 4mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA 4.5V @ 8mA 5V @ 8mA 5V @ 8mA
  • IXYS Related Products
  • IXFN32N120P Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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