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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFN34N80
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IXFN34N80IXYS MOSFET N-CH 800V 34A SOT-227B
Part NumberIXFN34N80
PackageSOT-227-4, miniBLOC
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFN34N80
DescriptionMOSFET N-CH 800V 34A SOT-227B
In stock28682
Data sheet
1.IXFN34N80.pdf 2.IXFN34N80.pdf
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  • Specifications
  • Product Details - IXFN34N80
  • IXFN34N80 Tech Specifications
    IXYS - IXFN34N80 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFN34N80
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5V @ 8mA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package SOT-227B
    Series HiPerFET™
    Rds On (Max) @ Id, Vgs 240mOhm @ 500mA, 10V
    Power Dissipation (Max) 600W (Tc)
    Package / Case SOT-227-4, miniBLOC
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Chassis Mount
    Input Capacitance (Ciss) (Max) @ Vds 7500 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 270 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 800 V
    Current - Continuous Drain (Id) @ 25°C 34A (Tc)
    Base Product Number IXFN34
  • TheIXFN34N80is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 800V 34A SOT-227B and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5V @ 8mA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFN34N80 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFN34N80 IXFN38N80Q2 IXFN32N100Q3 IXFN36N110P
Part Number IXFN34N80 IXFN38N80Q2 IXFN32N100Q3 IXFN36N110P
Manufacturer IXYS IXYS IXYS IXYS
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Package Tube Tube Tube Tube
Mounting Type Chassis Mount Chassis Mount Chassis Mount Chassis Mount
Vgs(th) (Max) @ Id 5V @ 8mA 4.5V @ 8mA 6.5V @ 8mA 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 270 nC @ 10 V 190 nC @ 10 V 195 nC @ 10 V 350 nC @ 10 V
Base Product Number IXFN34 IXFN38 IXFN32 IXFN36
Current - Continuous Drain (Id) @ 25°C 34A (Tc) 38A (Tc) 28A (Tc) 36A (Tc)
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Feature - - - -
Drain to Source Voltage (Vdss) 800 V 800 V 1000 V 1100 V
Series HiPerFET™ HiPerFET™, Q2 Class HiPerFET™, Q3 Class HiPerFET™, Polar
FET Type N-Channel N-Channel N-Channel N-Channel
Input Capacitance (Ciss) (Max) @ Vds 7500 pF @ 25 V 8340 pF @ 25 V 9940 pF @ 25 V 23000 pF @ 25 V
Rds On (Max) @ Id, Vgs 240mOhm @ 500mA, 10V 220mOhm @ 500mA, 10V 320mOhm @ 16A, 10V 240mOhm @ 500mA, 10V
Vgs (Max) ±20V ±30V ±30V ±30V
Supplier Device Package SOT-227B SOT-227B SOT-227B SOT-227B
Power Dissipation (Max) 600W (Tc) 735W (Tc) 780W (Tc) 1000W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
  • IXYS Related Products
  • IXFN34N80 Download Datasheets (2)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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