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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFN36N110P
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IXFN36N110PIXYS MOSFET N-CH 1100V 36A SOT-227B
Part NumberIXFN36N110P
PackageSOT-227-4, miniBLOC
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFN36N110P
DescriptionMOSFET N-CH 1100V 36A SOT-227B
In stock3306
Data sheet
IXFN36N110P.pdf
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  • Specifications
  • Product Details - IXFN36N110P
  • IXFN36N110P Tech Specifications
    IXYS - IXFN36N110P technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFN36N110P
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 6.5V @ 1mA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package SOT-227B
    Series HiPerFET™, Polar
    Rds On (Max) @ Id, Vgs 240mOhm @ 500mA, 10V
    Power Dissipation (Max) 1000W (Tc)
    Package / Case SOT-227-4, miniBLOC
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Chassis Mount
    Input Capacitance (Ciss) (Max) @ Vds 23000 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 350 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 1100 V
    Current - Continuous Drain (Id) @ 25°C 36A (Tc)
    Base Product Number IXFN36
  • TheIXFN36N110Pis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 1100V 36A SOT-227B and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 6.5V @ 1mA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFN36N110P or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFN36N110P IXFN40N110P IXFN340N07 IXFN34N80
Part Number IXFN36N110P IXFN40N110P IXFN340N07 IXFN34N80
Manufacturer IXYS IXYS IXYS IXYS
Input Capacitance (Ciss) (Max) @ Vds 23000 pF @ 25 V 19000 pF @ 25 V 12200 pF @ 25 V 7500 pF @ 25 V
Package Tube Tube Tube Tube
Gate Charge (Qg) (Max) @ Vgs 350 nC @ 10 V 310 nC @ 10 V 490 nC @ 10 V 270 nC @ 10 V
Drain to Source Voltage (Vdss) 1100 V 1100 V 70 V 800 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc) 34A (Tc) 340A (Tc) 34A (Tc)
FET Type N-Channel N-Channel N-Channel N-Channel
Mounting Type Chassis Mount Chassis Mount Chassis Mount Chassis Mount
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Power Dissipation (Max) 1000W (Tc) 890W (Tc) 700W (Tc) 600W (Tc)
Series HiPerFET™, Polar HiPerFET™, Polar HiPerFET™ HiPerFET™
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Base Product Number IXFN36 IXFN40 IXFN340 IXFN34
Vgs (Max) ±30V ±30V ±20V ±20V
Vgs(th) (Max) @ Id 6.5V @ 1mA 6.5V @ 1mA 4V @ 8mA 5V @ 8mA
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
FET Feature - - - -
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC
Supplier Device Package SOT-227B SOT-227B SOT-227B SOT-227B
Rds On (Max) @ Id, Vgs 240mOhm @ 500mA, 10V 260mOhm @ 20A, 10V 4mOhm @ 100A, 10V 240mOhm @ 500mA, 10V
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  • IXFN36N110P Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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