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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFN40N90P
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IXFN40N90PIXYS MOSFET N-CH 900V 33A SOT227B
Part NumberIXFN40N90P
PackageSOT-227-4, miniBLOC
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFN40N90P
DescriptionMOSFET N-CH 900V 33A SOT227B
In stock34248
Data sheet
IXFN40N90P.pdf
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  • Specifications
  • Product Details - IXFN40N90P
  • IXFN40N90P Tech Specifications
    IXYS - IXFN40N90P technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFN40N90P
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 6.5V @ 1mA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package SOT-227B
    Series HiPerFET™, Polar
    Rds On (Max) @ Id, Vgs 210mOhm @ 20A, 10V
    Power Dissipation (Max) 695W (Tc)
    Package / Case SOT-227-4, miniBLOC
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Chassis Mount
    Input Capacitance (Ciss) (Max) @ Vds 14000 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 900 V
    Current - Continuous Drain (Id) @ 25°C 33A (Tc)
    Base Product Number IXFN40
  • TheIXFN40N90Pis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 900V 33A SOT227B and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 6.5V @ 1mA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFN40N90P or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFN40N90P IXFN38N100P IXFN44N50U2 IXFN44N100P
Part Number IXFN40N90P IXFN38N100P IXFN44N50U2 IXFN44N100P
Manufacturer IXYS IXYS IXYS IXYS
Series HiPerFET™, Polar HiPerFET™, Polar HiPerFET™ HiPerFET™, Polar
Vgs (Max) ±30V ±30V ±20V ±30V
Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V 350 nC @ 10 V 270 nC @ 10 V 305 nC @ 10 V
Package Tube Tube Tube Tube
FET Type N-Channel N-Channel N-Channel N-Channel
Rds On (Max) @ Id, Vgs 210mOhm @ 20A, 10V 210mOhm @ 19A, 10V 120mOhm @ 500mA, 10V 220mOhm @ 22A, 10V
Supplier Device Package SOT-227B SOT-227B SOT-227B SOT-227B
Base Product Number IXFN40 IXFN38 IXFN44 IXFN44
Drain to Source Voltage (Vdss) 900 V 1000 V 500 V 1000 V
Power Dissipation (Max) 695W (Tc) 1000W (Tc) 520W (Tc) 890W (Tc)
Input Capacitance (Ciss) (Max) @ Vds 14000 pF @ 25 V 24000 pF @ 25 V 8400 pF @ 25 V 19000 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA 6.5V @ 1mA 4V @ 8mA 6.5V @ 1mA
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Mounting Type Chassis Mount Chassis Mount Chassis Mount Chassis Mount
Current - Continuous Drain (Id) @ 25°C 33A (Tc) 38A (Tc) 44A (Tc) 37A (Tc)
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC
FET Feature - - - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
  • IXYS Related Products
  • IXFN40N90P Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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