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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFN70N120SK
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IXFN70N120SKIXYS SICFET N-CH 1200V 68A SOT227B
Part NumberIXFN70N120SK
PackageSOT-227-4, miniBLOC
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFN70N120SK
DescriptionSICFET N-CH 1200V 68A SOT227B
In stock22370
Data sheet
IXFN70N120SK.pdf
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  • Specifications
  • Product Details - IXFN70N120SK
  • IXFN70N120SK Tech Specifications
    IXYS - IXFN70N120SK technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFN70N120SK
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4V @ 15mA
    Vgs (Max) +20V, -5V
    Technology SiCFET (Silicon Carbide)
    Supplier Device Package SOT-227B
    Series -
    Rds On (Max) @ Id, Vgs 34mOhm @ 50A, 20V
    Power Dissipation (Max) -
    Package / Case SOT-227-4, miniBLOC
    Package Tube
    Operating Temperature -40°C ~ 175°C (TJ)
    Mounting Type Chassis Mount
    Input Capacitance (Ciss) (Max) @ Vds 2790 pF @ 1000 V
    Gate Charge (Qg) (Max) @ Vgs 161 nC @ 20 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 20V
    Drain to Source Voltage (Vdss) 1200 V
    Current - Continuous Drain (Id) @ 25°C 68A (Tc)
    Base Product Number IXFN70
  • TheIXFN70N120SKis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is SICFET N-CH 1200V 68A SOT227B and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4V @ 15mA and Vgs (Max) of +20V, -5V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFN70N120SK or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFN70N120SK IXFN64N50P IXFN70N100X IXFN80N50P
Part Number IXFN70N120SK IXFN64N50P IXFN70N100X IXFN80N50P
Manufacturer IXYS IXYS IXYS IXYS
Vgs(th) (Max) @ Id 4V @ 15mA 5.5V @ 8mA 6V @ 8mA 5V @ 8mA
Series - HiPerFET™, Polar HiPerFET™, Ultra X HiPerFET™, Polar
Power Dissipation (Max) - 700W (Tc) 1200W (Tc) 700W (Tc)
Technology SiCFET (Silicon Carbide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Base Product Number IXFN70 IXFN64 IXFN70 IXFN80
FET Feature - - - -
Package Tube Tube Tube Tube
FET Type N-Channel N-Channel N-Channel N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2790 pF @ 1000 V 8700 pF @ 25 V 9150 pF @ 25 V 12700 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C 68A (Tc) 61A (Tc) 56A (Tc) 66A (Tc)
Drain to Source Voltage (Vdss) 1200 V 500 V 1000 V 500 V
Mounting Type Chassis Mount Chassis Mount Chassis Mount Chassis Mount
Supplier Device Package SOT-227B SOT-227B SOT-227B SOT-227B
Vgs (Max) +20V, -5V ±30V ±30V ±30V
Gate Charge (Qg) (Max) @ Vgs 161 nC @ 20 V 150 nC @ 10 V 350 nC @ 10 V 195 nC @ 10 V
Rds On (Max) @ Id, Vgs 34mOhm @ 50A, 20V 85mOhm @ 32A, 10V 89mOhm @ 35A, 10V 65mOhm @ 500mA, 10V
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC
Operating Temperature -40°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On) 20V 10V 10V 10V
  • IXYS Related Products
  • IXFN70N120SK Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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