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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFR24N100
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IXFR24N100IXYS MOSFET N-CH 1KV 22A ISOPLUS247
Part NumberIXFR24N100
PackageTO-247-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFR24N100
DescriptionMOSFET N-CH 1KV 22A ISOPLUS247
In stock33257
Data sheet
1.IXFR24N100.pdf 2.IXFR24N100.pdf
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  • Specifications
  • Product Details - IXFR24N100
  • IXFR24N100 Tech Specifications
    IXYS - IXFR24N100 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFR24N100
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5.5V @ 8mA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package ISOPLUS247™
    Series HiPerFET™
    Rds On (Max) @ Id, Vgs 390mOhm @ 12A, 10V
    Power Dissipation (Max) 416W (Tc)
    Package / Case TO-247-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 8700 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 267 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 1000 V
    Current - Continuous Drain (Id) @ 25°C 22A (Tc)
    Base Product Number IXFR24
  • TheIXFR24N100is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 1KV 22A ISOPLUS247 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5.5V @ 8mA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFR24N100 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFR24N100 IXFR24N50 IXFR26N50 IXFR200N10P
Part Number IXFR24N100 IXFR24N50 IXFR26N50 IXFR200N10P
Manufacturer IXYS IXYS IXYS IXYS
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Drain to Source Voltage (Vdss) 1000 V 500 V 500 V 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
FET Feature - - - -
Gate Charge (Qg) (Max) @ Vgs 267 nC @ 10 V 160 nC @ 10 V 160 nC @ 10 V 235 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 8700 pF @ 25 V 4200 pF @ 25 V 4200 pF @ 25 V 7600 pF @ 25 V
Package Tube Tube Tube Box
Current - Continuous Drain (Id) @ 25°C 22A (Tc) 24A (Tc) 26A (Tc) 133A (Tc)
Rds On (Max) @ Id, Vgs 390mOhm @ 12A, 10V 230mOhm @ 12A, 10V 200mOhm @ 13A, 10V 9mOhm @ 100A, 10V
Series HiPerFET™ HiPerFET™ HiPerFET™ HiPerFET™, Polar
Vgs (Max) ±20V ±20V ±20V ±20V
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Supplier Device Package ISOPLUS247™ ISOPLUS247™ ISOPLUS247™ ISOPLUS247™
Mounting Type Through Hole Through Hole Through Hole Through Hole
Base Product Number IXFR24 IXFR24 IXFR26 IXFR200
Vgs(th) (Max) @ Id 5.5V @ 8mA 4V @ 4mA 4V @ 4mA 5V @ 8mA
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Power Dissipation (Max) 416W (Tc) 250W (Tc) 250W (Tc) 300W (Tc)
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  • IXFR24N100 Download Datasheets (2)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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