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IXFR80N50PIXYS MOSFET N-CH 500V 45A ISOPLUS247
Part NumberIXFR80N50P
PackageTO-247-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFR80N50P
DescriptionMOSFET N-CH 500V 45A ISOPLUS247
In stock1496
Data sheet
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  • Specifications
  • Product Details - IXFR80N50P
  • IXFR80N50P Tech Specifications
    IXYS - IXFR80N50P technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFR80N50P
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5V @ 8mA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package ISOPLUS247™
    Series HiPerFET™, Polar
    Rds On (Max) @ Id, Vgs 72mOhm @ 40A, 10V
    Power Dissipation (Max) 360W (Tc)
    Package / Case TO-247-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 12700 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 197 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 500 V
    Current - Continuous Drain (Id) @ 25°C 45A (Tc)
    Base Product Number IXFR80
  • TheIXFR80N50Pis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 500V 45A ISOPLUS247 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5V @ 8mA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFR80N50P or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFR80N50P IXFR80N20Q IXFR80N10Q IXFR64N50Q3
Part Number IXFR80N50P IXFR80N20Q IXFR80N10Q IXFR64N50Q3
Manufacturer IXYS IXYS IXYS IXYS
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Series HiPerFET™, Polar HiPerFET™ HiPerFET™ HiPerFET™, Q3 Class
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Supplier Device Package ISOPLUS247™ ISOPLUS247™ ISOPLUS247™ ISOPLUS247™
Mounting Type Through Hole Through Hole Through Hole Through Hole
Gate Charge (Qg) (Max) @ Vgs 197 nC @ 10 V 180 nC @ 10 V 180 nC @ 10 V 145 nC @ 10 V
FET Type N-Channel N-Channel N-Channel N-Channel
Rds On (Max) @ Id, Vgs 72mOhm @ 40A, 10V 28mOhm @ 80A, 10V 15mOhm @ 76A, 10V 95mOhm @ 32A, 10V
Input Capacitance (Ciss) (Max) @ Vds 12700 pF @ 25 V 4600 pF @ 25 V 4500 pF @ 25 V 6950 pF @ 25 V
Vgs(th) (Max) @ Id 5V @ 8mA 4V @ 4mA - 6.5V @ 4mA
FET Feature - - - -
Package Tube Tube Tube Tube
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Power Dissipation (Max) 360W (Tc) 310W (Tc) 310W (Tc) 500W (Tc)
Vgs (Max) ±30V ±20V ±20V ±30V
Base Product Number IXFR80 IXFR80 IXFR80 IXFR64
Drain to Source Voltage (Vdss) 500 V 200 V 100 V 500 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc) 71A (Tc) 76A (Tc) 45A (Tc)
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Certifications & Memberships We strictly controls the quality of products, environment and services.Through the ISO certification of the third party. View More >

Brand introduction

IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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