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IXFT100N30X3HVIXYS MOSFET N-CH 300V 100A TO268HV
Part NumberIXFT100N30X3HV
PackageTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFT100N30X3HV
DescriptionMOSFET N-CH 300V 100A TO268HV
In stock2243
Data sheet
1.IXFT100N30X3HV.pdf 2.IXFT100N30X3HV.pdf 3.IXFT100N30X3HV.pdf
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  • Specifications
  • Product Details - IXFT100N30X3HV
  • IXFT100N30X3HV Tech Specifications
    IXYS - IXFT100N30X3HV technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFT100N30X3HV
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4.5V @ 4mA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-268HV (IXFT)
    Series HiPerFET™, Ultra X3
    Rds On (Max) @ Id, Vgs 13.5mOhm @ 50A, 10V
    Power Dissipation (Max) 480W (Tc)
    Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Surface Mount
    Input Capacitance (Ciss) (Max) @ Vds 7660 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 122 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 300 V
    Current - Continuous Drain (Id) @ 25°C 100A (Tc)
    Base Product Number IXFT100
  • TheIXFT100N30X3HVis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 300V 100A TO268HV and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4.5V @ 4mA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFT100N30X3HV or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFT100N30X3HV IXFT13N80Q IXFR80N50P IXFT13N100
Part Number IXFT100N30X3HV IXFT13N80Q IXFR80N50P IXFT13N100
Manufacturer IXYS IXYS IXYS IXYS
Series HiPerFET™, Ultra X3 HiPerFET™, Q Class HiPerFET™, Polar HiPerFET™
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-247-3 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Vgs(th) (Max) @ Id 4.5V @ 4mA 4.5V @ 4mA 5V @ 8mA 4.5V @ 4mA
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
FET Feature - - - -
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 10 V 90 nC @ 10 V 197 nC @ 10 V 155 nC @ 10 V
Drain to Source Voltage (Vdss) 300 V 800 V 500 V 1000 V
Base Product Number IXFT100 IXFT13 IXFR80 IXFT13
Package Tube Tube Tube Tube
Input Capacitance (Ciss) (Max) @ Vds 7660 pF @ 25 V 3250 pF @ 25 V 12700 pF @ 25 V 4000 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Supplier Device Package TO-268HV (IXFT) TO-268AA ISOPLUS247™ TO-268AA
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 13A (Tc) 45A (Tc) 12.5A (Tc)
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (Max) ±20V ±20V ±30V ±20V
Power Dissipation (Max) 480W (Tc) 250W (Tc) 360W (Tc) 300W (Tc)
Rds On (Max) @ Id, Vgs 13.5mOhm @ 50A, 10V 700mOhm @ 6.5A, 10V 72mOhm @ 40A, 10V 900mOhm @ 500mA, 10V
Mounting Type Surface Mount Surface Mount Through Hole Surface Mount
FET Type N-Channel N-Channel N-Channel N-Channel
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  • IXFT100N30X3HV Download Datasheets (3)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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