Name: IXYS IXFT12N100
Brand: IXYS
SKU: IXFT12N100
Availability: InStock

Specifications
Product Details - IXFT12N100

IXFT12N100 Tech Specifications
IXYS - IXFT12N100 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFT12N100

Manufacturer IXYS / Littelfuse

Vgs(th) (Max) @ Id 4.5V @ 4mA

Vgs (Max) ±20V

Technology MOSFET (Metal Oxide)

Supplier Device Package TO-268AA

Series HiPerFET™

Rds On (Max) @ Id, Vgs 1.05Ohm @ 6A, 10V

Power Dissipation (Max) 300W (Tc)

Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Package Tube

Operating Temperature -55°C ~ 150°C (TJ)

Mounting Type Surface Mount

Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V

FET Type N-Channel

FET Feature -

Drive Voltage (Max Rds On, Min Rds On) 10V

Drain to Source Voltage (Vdss) 1000 V

Current - Continuous Drain (Id) @ 25°C 12A (Tc)

Base Product Number IXFT12
TheIXFT12N100is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 1000V 12A TO268 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4.5V @ 4mA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFT12N100 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute
Part Number	IXFT12N100	IXFT120N15P	IXFR90N20	IXFR9N80Q
Manufacturer	IXYS	IXYS	IXYS	IXYS
Input Capacitance (Ciss) (Max) @ Vds	4000 pF @ 25 V	4900 pF @ 25 V	-	-
Series	HiPerFET™	HiPerFET™, Polar	-	HiPerFET™, Q Class
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V	150 V	200 V	800 V
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 175°C (TJ)	-	-
Base Product Number	IXFT12	IXFT120	IXFR90	IXFR9N80
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	-	-
FET Feature	-	-	-	-
Current - Continuous Drain (Id) @ 25°C	12A (Tc)	120A (Tc)	90A (Tc)	-
Power Dissipation (Max)	300W (Tc)	600W (Tc)	-	-
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	TO-247-3	TO-247-3
Vgs (Max)	±20V	±20V	-	-
Supplier Device Package	TO-268AA	TO-268AA	ISOPLUS247™	ISOPLUS247™
Package	Tube	Box	Tube	Box
Vgs(th) (Max) @ Id	4.5V @ 4mA	5V @ 4mA	-	-
Gate Charge (Qg) (Max) @ Vgs	155 nC @ 10 V	150 nC @ 10 V	-	-
Rds On (Max) @ Id, Vgs	1.05Ohm @ 6A, 10V	16mOhm @ 500mA, 10V	-	-
Mounting Type	Surface Mount	Surface Mount	Through Hole	Through Hole
FET Type	N-Channel	N-Channel	N-Channel	N-Channel

Brand introduction

IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

IXYS / Littelfuse

Ixys-Electronics.com

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