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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFT20N80P
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IXFT20N80PIXYS MOSFET N-CH 800V 20A TO268
Part NumberIXFT20N80P
PackageTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFT20N80P
DescriptionMOSFET N-CH 800V 20A TO268
In stock4176
Data sheet
IXFT20N80P.pdf
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  • Specifications
  • Product Details - IXFT20N80P
  • IXFT20N80P Tech Specifications
    IXYS - IXFT20N80P technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFT20N80P
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5V @ 4mA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-268AA
    Series HiPerFET™, Polar
    Rds On (Max) @ Id, Vgs 520mOhm @ 10A, 10V
    Power Dissipation (Max) 500W (Tc)
    Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Surface Mount
    Input Capacitance (Ciss) (Max) @ Vds 4685 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 800 V
    Current - Continuous Drain (Id) @ 25°C 20A (Tc)
    Base Product Number IXFT20
  • TheIXFT20N80Pis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 800V 20A TO268 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5V @ 4mA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFT20N80P or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFT20N80P IXFT16N90Q IXFT20N100P IXFT24N90P
Part Number IXFT20N80P IXFT16N90Q IXFT20N100P IXFT24N90P
Manufacturer IXYS IXYS IXYS IXYS
Input Capacitance (Ciss) (Max) @ Vds 4685 pF @ 25 V 4000 pF @ 25 V 7300 pF @ 25 V 7200 pF @ 25 V
Rds On (Max) @ Id, Vgs 520mOhm @ 10A, 10V 650mOhm @ 8A, 10V 570mOhm @ 10A, 10V 420mOhm @ 12A, 10V
Supplier Device Package TO-268AA TO-268AA TO-268AA TO-268AA
Series HiPerFET™, Polar HiPerFET™ HiPerFET™, Polar HiPerFET™, Polar
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 900 V 1000 V 900 V
Vgs (Max) ±30V ±20V ±30V ±30V
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Vgs(th) (Max) @ Id 5V @ 4mA 5V @ 4mA 6.5V @ 1mA 6.5V @ 1mA
FET Feature - - - -
Power Dissipation (Max) 500W (Tc) 360W (Tc) 660W (Tc) 660W (Tc)
Base Product Number IXFT20 IXFT16 IXFT20 IXFT24
Package Tube Tube Tube Tube
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V 170 nC @ 10 V 126 nC @ 10 V 130 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 16A (Tc) 20A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
  • IXYS Related Products
  • IXFT20N80P Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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