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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFT20N80Q
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IXFT20N80QIXYS MOSFET N-CH 800V 20A TO268
Part NumberIXFT20N80Q
PackageTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFT20N80Q
DescriptionMOSFET N-CH 800V 20A TO268
In stock3332
Data sheet
1.IXFT20N80Q.pdf 2.IXFT20N80Q.pdf
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  • Specifications
  • Product Details - IXFT20N80Q
  • IXFT20N80Q Tech Specifications
    IXYS - IXFT20N80Q technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFT20N80Q
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4.5V @ 4mA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-268AA
    Series HiPerFET™
    Rds On (Max) @ Id, Vgs 420mOhm @ 10A, 10V
    Power Dissipation (Max) 360W (Tc)
    Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Surface Mount
    Input Capacitance (Ciss) (Max) @ Vds 5100 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 800 V
    Current - Continuous Drain (Id) @ 25°C 20A (Tc)
    Base Product Number IXFT20
  • TheIXFT20N80Qis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 800V 20A TO268 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4.5V @ 4mA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFT20N80Q or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFT20N80Q IXFT18N100Q3 IXFT23N80Q IXFT17N80Q
Part Number IXFT20N80Q IXFT18N100Q3 IXFT23N80Q IXFT17N80Q
Manufacturer IXYS IXYS IXYS IXYS
Rds On (Max) @ Id, Vgs 420mOhm @ 10A, 10V 660mOhm @ 9A, 10V 420mOhm @ 500mA, 10V 600mOhm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V 90 nC @ 10 V 130 nC @ 10 V 95 nC @ 10 V
Supplier Device Package TO-268AA TO-268AA TO-268AA TO-268AA
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 18A (Tc) 23A (Tc) 17A (Tc)
Power Dissipation (Max) 360W (Tc) 830W (Tc) 500W (Tc) 400W (Tc)
FET Feature - - - -
Input Capacitance (Ciss) (Max) @ Vds 5100 pF @ 25 V 4890 pF @ 25 V 4900 pF @ 25 V 3600 pF @ 25 V
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Series HiPerFET™ HiPerFET™, Q3 Class HiPerFET™, Q Class HiPerFET™
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
FET Type N-Channel N-Channel N-Channel N-Channel
Drain to Source Voltage (Vdss) 800 V 1000 V 800 V 800 V
Vgs (Max) ±20V ±30V ±30V ±20V
Base Product Number IXFT20 IXFT18 IXFT23 IXFT17
Package Tube Tube Box Box
Vgs(th) (Max) @ Id 4.5V @ 4mA 6.5V @ 4mA 4.5V @ 3mA 4.5V @ 4mA
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  • IXFT20N80Q Download Datasheets (2)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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