Name: IXYS IXFT6N100F
Brand: IXYS
SKU: IXFT6N100F
Availability: InStock

Specifications
Product Details - IXFT6N100F

IXFT6N100F Tech Specifications
IXYS - IXFT6N100F technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFT6N100F

Manufacturer IXYS / Littelfuse

Vgs(th) (Max) @ Id 5.5V @ 2.5mA

Vgs (Max) ±20V

Technology MOSFET (Metal Oxide)

Supplier Device Package TO-268

Series HiPerRF™

Rds On (Max) @ Id, Vgs 1.9Ohm @ 3A, 10V

Power Dissipation (Max) 180W (Tc)

Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Package Tube

Operating Temperature -55°C ~ 150°C (TJ)

Mounting Type Surface Mount

Input Capacitance (Ciss) (Max) @ Vds 1770 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V

FET Type N-Channel

FET Feature -

Drive Voltage (Max Rds On, Min Rds On) 10V

Drain to Source Voltage (Vdss) 1000 V

Current - Continuous Drain (Id) @ 25°C 6A (Tc)

Base Product Number IXFT6
TheIXFT6N100Fis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 1000V 6A TO268 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5.5V @ 2.5mA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFT6N100F or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute
Part Number	IXFT6N100F	IXFT80N08	IXFT54N65X3HV	IXFT7N90Q
Manufacturer	IXYS	IXYS	IXYS	IXYS
FET Type	N-Channel	N-Channel	-	N-Channel
Mounting Type	Surface Mount	Surface Mount	-	Surface Mount
Series	HiPerRF™	HiPerFET™	HiPerFET™, Ultra X3	HiPerFET™, Q Class
Vgs(th) (Max) @ Id	5.5V @ 2.5mA	4V @ 4mA	-	5V @ 2.5mA
Current - Continuous Drain (Id) @ 25°C	6A (Tc)	80A (Tc)	-	7A (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-	-55°C ~ 150°C (TJ)
Package	Tube	Tube	Tube	Tube
Drain to Source Voltage (Vdss)	1000 V	80 V	-	900 V
Vgs (Max)	±20V	±20V	-	±20V
Rds On (Max) @ Id, Vgs	1.9Ohm @ 3A, 10V	9mOhm @ 40A, 10V	-	1.5Ohm @ 500mA, 10V
Supplier Device Package	TO-268	TO-268AA	-	TO-268AA
Input Capacitance (Ciss) (Max) @ Vds	1770 pF @ 25 V	4800 pF @ 25 V	-	2200 pF @ 25 V
Base Product Number	IXFT6	IXFT80	IXFT54	IXFT7N90
FET Feature	-	-	-	-
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	-	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Gate Charge (Qg) (Max) @ Vgs	54 nC @ 10 V	180 nC @ 10 V	-	56 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	-	10V
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	-	MOSFET (Metal Oxide)
Power Dissipation (Max)	180W (Tc)	300W (Tc)	-	180W (Tc)

Brand introduction

IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

IXYS / Littelfuse

Ixys-Electronics.com

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