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IXFT88N30PIXYS MOSFET N-CH 300V 88A TO268
Part NumberIXFT88N30P
PackageTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFT88N30P
DescriptionMOSFET N-CH 300V 88A TO268
In stock1905
Data sheet
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  • Specifications
  • Product Details - IXFT88N30P
  • IXFT88N30P Tech Specifications
    IXYS - IXFT88N30P technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFT88N30P
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5V @ 4mA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-268AA
    Series HiPerFET™, Polar
    Rds On (Max) @ Id, Vgs 40mOhm @ 44A, 10V
    Power Dissipation (Max) 600W (Tc)
    Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Surface Mount
    Input Capacitance (Ciss) (Max) @ Vds 6300 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 300 V
    Current - Continuous Drain (Id) @ 25°C 88A (Tc)
    Base Product Number IXFT88
  • TheIXFT88N30Pis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 300V 88A TO268 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5V @ 4mA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFT88N30P or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFT88N30P IXFV110N10PS IXFT80N65X2HV IXFT80N085
Part Number IXFT88N30P IXFV110N10PS IXFT80N65X2HV IXFT80N085
Manufacturer IXYS IXYS IXYS IXYS
Drain to Source Voltage (Vdss) 300 V 100 V 650 V 85 V
Current - Continuous Drain (Id) @ 25°C 88A (Tc) 110A (Tc) 80A (Tc) 80A (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Supplier Device Package TO-268AA PLUS-220SMD TO-268HV (IXFT) TO-268AA
Base Product Number IXFT88 IXFV110 IXFT80 IXFT80
Package Tube Box Tube Tube
Input Capacitance (Ciss) (Max) @ Vds 6300 pF @ 25 V 3550 pF @ 25 V 8300 pF @ 25 V 4800 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 600W (Tc) 480W (Tc) 890W (Tc) 300W (Tc)
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 110 nC @ 10 V 140 nC @ 10 V 180 nC @ 10 V
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA PLUS-220SMD TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
FET Type N-Channel N-Channel N-Channel N-Channel
Rds On (Max) @ Id, Vgs 40mOhm @ 44A, 10V 15mOhm @ 500mA, 10V - 9mOhm @ 40A, 10V
Series HiPerFET™, Polar PolarHT™ HiPerFET™ HiPerFET™, Ultra X2 HiPerFET™
Vgs (Max) ±20V ±20V ±30V ±20V
Vgs(th) (Max) @ Id 5V @ 4mA 5V @ 4mA 5V @ 4mA 4V @ 4mA
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Certifications & Memberships We strictly controls the quality of products, environment and services.Through the ISO certification of the third party. View More >

Brand introduction

IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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