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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFV12N80P
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IXFV12N80PIXYS MOSFET N-CH 800V 12A PLUS220
Part NumberIXFV12N80P
PackageTO-220-3, Short Tab
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFV12N80P
DescriptionMOSFET N-CH 800V 12A PLUS220
In stock4222
Data sheet
1.IXFV12N80P.pdf 2.IXFV12N80P.pdf
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  • Specifications
  • Product Details - IXFV12N80P
  • IXFV12N80P Tech Specifications
    IXYS - IXFV12N80P technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFV12N80P
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5.5V @ 2.5mA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package PLUS220
    Series HiPerFET™, PolarHT™
    Rds On (Max) @ Id, Vgs 850mOhm @ 500mA, 10V
    Power Dissipation (Max) 360W (Tc)
    Package / Case TO-220-3, Short Tab
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 800 V
    Current - Continuous Drain (Id) @ 25°C 12A (Tc)
    Base Product Number IXFV12
  • TheIXFV12N80Pis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 800V 12A PLUS220 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5.5V @ 2.5mA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFV12N80P or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFV12N80P IXFV110N10PS IXFV14N80P IXFT88N30P-TRL
Part Number IXFV12N80P IXFV110N10PS IXFV14N80P IXFT88N30P-TRL
Manufacturer IXYS IXYS IXYS IXYS
Base Product Number IXFV12 IXFV110 IXFV14 IXFT88
Series HiPerFET™, PolarHT™ PolarHT™ HiPerFET™ HiPerFET™, PolarHT™ HiPerFET™, Polar
Rds On (Max) @ Id, Vgs 850mOhm @ 500mA, 10V 15mOhm @ 500mA, 10V 720mOhm @ 500mA, 10V 40mOhm @ 44A, 10V
FET Feature - - - -
Vgs (Max) ±30V ±20V ±30V ±20V
FET Type N-Channel N-Channel N-Channel N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 25 V 3550 pF @ 25 V 3900 pF @ 25 V 6300 pF @ 25 V
Supplier Device Package PLUS220 PLUS-220SMD PLUS220 TO-268
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id 5.5V @ 2.5mA 5V @ 4mA 5.5V @ 4mA 5V @ 4mA
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Package / Case TO-220-3, Short Tab PLUS-220SMD TO-220-3, Short Tab TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Drain to Source Voltage (Vdss) 800 V 100 V 800 V 300 V
Power Dissipation (Max) 360W (Tc) 480W (Tc) 400W (Tc) 600W (Tc)
Package Tube Box Tube Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V 110 nC @ 10 V 61 nC @ 10 V 180 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 110A (Tc) 14A (Tc) 88A (Tc)
Mounting Type Through Hole Surface Mount Through Hole Surface Mount
  • IXYS Related Products
  • IXFV12N80P Download Datasheets (2)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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