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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFX32N80P
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IXFX32N80PIXYS MOSFET N-CH 800V 32A PLUS247-3
Part NumberIXFX32N80P
PackageTO-247-3 Variant
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFX32N80P
DescriptionMOSFET N-CH 800V 32A PLUS247-3
In stock1706
Data sheet
IXFX32N80P.pdf
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  • Specifications
  • Product Details - IXFX32N80P
  • IXFX32N80P Tech Specifications
    IXYS - IXFX32N80P technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFX32N80P
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5V @ 8mA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package PLUS247™-3
    Series HiPerFET™, Polar
    Rds On (Max) @ Id, Vgs 270mOhm @ 16A, 10V
    Power Dissipation (Max) 830W (Tc)
    Package / Case TO-247-3 Variant
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 8800 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 800 V
    Current - Continuous Drain (Id) @ 25°C 32A (Tc)
    Base Product Number IXFX32
  • TheIXFX32N80Pis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 800V 32A PLUS247-3 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5V @ 8mA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFX32N80P or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFX32N80P IXFX40N90P IXFX38N80Q2 IXFX32N80Q3
Part Number IXFX32N80P IXFX40N90P IXFX38N80Q2 IXFX32N80Q3
Manufacturer IXYS IXYS IXYS IXYS
Series HiPerFET™, Polar HiPerFET™, Polar HiPerFET™, Q2 Class HiPerFET™, Q3 Class
Package Tube Tube Tube Tube
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Input Capacitance (Ciss) (Max) @ Vds 8800 pF @ 25 V 14000 pF @ 25 V 8340 pF @ 25 V 6940 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V 230 nC @ 10 V 190 nC @ 10 V 140 nC @ 10 V
FET Feature - - - -
FET Type N-Channel N-Channel N-Channel N-Channel
Mounting Type Through Hole Through Hole Through Hole Through Hole
Vgs (Max) ±30V ±30V ±30V ±30V
Supplier Device Package PLUS247™-3 PLUS247™-3 PLUS247™-3 PLUS247™-3
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 270mOhm @ 16A, 10V 230mOhm @ 20A, 10V 220mOhm @ 19A, 10V 270mOhm @ 16A, 10V
Base Product Number IXFX32 IXFX40 IXFX38 IXFX32
Power Dissipation (Max) 830W (Tc) 960W (Tc) 735W (Tc) 1000W (Tc)
Package / Case TO-247-3 Variant TO-247-3 Variant TO-247-3 Variant TO-247-3 Variant
Current - Continuous Drain (Id) @ 25°C 32A (Tc) 40A (Tc) 38A (Tc) 32A (Tc)
Vgs(th) (Max) @ Id 5V @ 8mA 6.5V @ 1mA 4.5V @ 8mA 6.5V @ 4mA
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 800 V 900 V 800 V 800 V
  • IXYS Related Products
  • IXFX32N80P Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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