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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFX64N60Q3
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IXFX64N60Q3IXYS MOSFET N-CH 600V 64A PLUS247-3
Part NumberIXFX64N60Q3
PackageTO-247-3 Variant
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFX64N60Q3
DescriptionMOSFET N-CH 600V 64A PLUS247-3
In stock23136
Data sheet
IXFX64N60Q3.pdf
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  • Specifications
  • Product Details - IXFX64N60Q3
  • IXFX64N60Q3 Tech Specifications
    IXYS - IXFX64N60Q3 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFX64N60Q3
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 6.5V @ 4mA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package PLUS247™-3
    Series HiPerFET™
    Rds On (Max) @ Id, Vgs 95mOhm @ 32A, 10V
    Power Dissipation (Max) 1250W (Tc)
    Package / Case TO-247-3 Variant
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 9930 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 190 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 600 V
    Current - Continuous Drain (Id) @ 25°C 64A (Tc)
    Base Product Number IXFX64
  • TheIXFX64N60Q3is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 600V 64A PLUS247-3 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 6.5V @ 4mA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFX64N60Q3 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFX64N60Q3 IXFX64N50Q3 IXFX55N50 IXFX66N85X
Part Number IXFX64N60Q3 IXFX64N50Q3 IXFX55N50 IXFX66N85X
Manufacturer IXYS IXYS IXYS IXYS
FET Type N-Channel N-Channel N-Channel N-Channel
Vgs (Max) ±30V ±30V ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 9930 pF @ 25 V 6950 pF @ 25 V 9400 pF @ 25 V 8900 pF @ 25 V
Vgs(th) (Max) @ Id 6.5V @ 4mA 6.5V @ 4mA 4.5V @ 8mA 5.5V @ 8mA
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Package / Case TO-247-3 Variant TO-247-3 Variant TO-247-3 Variant TO-247-3 Variant
Base Product Number IXFX64 IXFX64 IXFX55 IXFX66
Rds On (Max) @ Id, Vgs 95mOhm @ 32A, 10V 85mOhm @ 32A, 10V 80mOhm @ 500mA, 10V 65mOhm @ 500mA, 10V
Mounting Type Through Hole Through Hole Through Hole Through Hole
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Supplier Device Package PLUS247™-3 PLUS247™-3 PLUS247™-3 PLUS247™-3
FET Feature - - - -
Package Tube Tube Tube Tube
Gate Charge (Qg) (Max) @ Vgs 190 nC @ 10 V 145 nC @ 10 V 330 nC @ 10 V 230 nC @ 10 V
Series HiPerFET™ HiPerFET™, Q3 Class HiPerFET™ HiPerFET™, Ultra X
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Power Dissipation (Max) 1250W (Tc) 1000W (Tc) 625W (Tc) 1250W (Tc)
Current - Continuous Drain (Id) @ 25°C 64A (Tc) 64A (Tc) 55A (Tc) 66A (Tc)
Drain to Source Voltage (Vdss) 600 V 500 V 500 V 850 V
  • IXYS Related Products
  • IXFX64N60Q3 Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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