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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFX66N85X
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IXFX66N85XIXYS MOSFET N-CH 850V 66A PLUS247-3
Part NumberIXFX66N85X
PackageTO-247-3 Variant
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFX66N85X
DescriptionMOSFET N-CH 850V 66A PLUS247-3
In stock27317
Data sheet
IXFX66N85X.pdf
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  • Specifications
  • Product Details - IXFX66N85X
  • IXFX66N85X Tech Specifications
    IXYS - IXFX66N85X technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFX66N85X
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5.5V @ 8mA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package PLUS247™-3
    Series HiPerFET™, Ultra X
    Rds On (Max) @ Id, Vgs 65mOhm @ 500mA, 10V
    Power Dissipation (Max) 1250W (Tc)
    Package / Case TO-247-3 Variant
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 8900 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 850 V
    Current - Continuous Drain (Id) @ 25°C 66A (Tc)
    Base Product Number IXFX66
  • TheIXFX66N85Xis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 850V 66A PLUS247-3 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5.5V @ 8mA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFX66N85X or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFX66N85X IXFX80N50P IXFX80N50Q3 IXFX88N20Q
Part Number IXFX66N85X IXFX80N50P IXFX80N50Q3 IXFX88N20Q
Manufacturer IXYS IXYS IXYS IXYS
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V 197 nC @ 10 V 200 nC @ 10 V 146 nC @ 10 V
FET Type N-Channel N-Channel N-Channel N-Channel
Drain to Source Voltage (Vdss) 850 V 500 V 500 V 200 V
Input Capacitance (Ciss) (Max) @ Vds 8900 pF @ 25 V 12700 pF @ 25 V 10000 pF @ 25 V 4150 pF @ 25 V
Vgs(th) (Max) @ Id 5.5V @ 8mA 5V @ 8mA 6.5V @ 8mA 4V @ 4mA
Vgs (Max) ±30V ±30V ±30V ±30V
Mounting Type Through Hole Through Hole Through Hole Through Hole
Series HiPerFET™, Ultra X HiPerFET™, Polar HiPerFET™, Q3 Class HiPerFET™, Q Class
FET Feature - - - -
Rds On (Max) @ Id, Vgs 65mOhm @ 500mA, 10V 65mOhm @ 40A, 10V 65mOhm @ 40A, 10V 30mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C 66A (Tc) 80A (Tc) 80A (Tc) 88A (Tc)
Package / Case TO-247-3 Variant TO-247-3 Variant TO-247-3 Variant TO-247-3 Variant
Package Tube Tube Tube Box
Power Dissipation (Max) 1250W (Tc) 1040W (Tc) 1250W (Tc) 500W (Tc)
Supplier Device Package PLUS247™-3 PLUS247™-3 PLUS247™-3 PLUS247™-3
Base Product Number IXFX66 IXFX80 IXFX80 IXFX88
  • IXYS Related Products
  • IXFX66N85X Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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