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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFX80N60P3
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IXFX80N60P3IXYS MOSFET N-CH 600V 80A PLUS247-3
Part NumberIXFX80N60P3
PackageTO-247-3 Variant
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFX80N60P3
DescriptionMOSFET N-CH 600V 80A PLUS247-3
In stock1820
Data sheet
IXFX80N60P3.pdf
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  • Specifications
  • Product Details - IXFX80N60P3
  • IXFX80N60P3 Tech Specifications
    IXYS - IXFX80N60P3 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFX80N60P3
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5V @ 8mA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package PLUS247™-3
    Series HiPerFET™, Polar3™
    Rds On (Max) @ Id, Vgs 70mOhm @ 500mA, 10V
    Power Dissipation (Max) 1300W (Tc)
    Package / Case TO-247-3 Variant
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 13100 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 190 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 600 V
    Current - Continuous Drain (Id) @ 25°C 80A (Tc)
    Base Product Number IXFX80
  • TheIXFX80N60P3is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 600V 80A PLUS247-3 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5V @ 8mA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFX80N60P3 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFX80N60P3 IXFX74N50P2 IXFX90N20Q IXFX66N85X
Part Number IXFX80N60P3 IXFX74N50P2 IXFX90N20Q IXFX66N85X
Manufacturer IXYS IXYS IXYS IXYS
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
FET Type N-Channel N-Channel N-Channel N-Channel
Vgs(th) (Max) @ Id 5V @ 8mA 5V @ 4mA 4V @ 4mA 5.5V @ 8mA
Series HiPerFET™, Polar3™ HiPerFET™, PolarHV™ HiPerFET™, Q Class HiPerFET™, Ultra X
Mounting Type Through Hole Through Hole Through Hole Through Hole
Power Dissipation (Max) 1300W (Tc) 1400W (Tc) 500W (Tc) 1250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 70mOhm @ 500mA, 10V 77mOhm @ 500mA, 10V 22mOhm @ 45A, 10V 65mOhm @ 500mA, 10V
FET Feature - - - -
Supplier Device Package PLUS247™-3 PLUS247™-3 PLUS247™-3 PLUS247™-3
Base Product Number IXFX80 IXFX74 IXFX90 IXFX66
Drain to Source Voltage (Vdss) 600 V 500 V 200 V 850 V
Package / Case TO-247-3 Variant TO-247-3 Variant TO-247-3 Variant TO-247-3 Variant
Gate Charge (Qg) (Max) @ Vgs 190 nC @ 10 V 165 nC @ 10 V 190 nC @ 10 V 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 13100 pF @ 25 V 9900 pF @ 25 V 6800 pF @ 25 V 8900 pF @ 25 V
Package Tube Tube Tube Tube
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (Max) ±30V ±30V ±20V ±30V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 74A (Tc) 90A (Tc) 66A (Tc)
  • IXYS Related Products
  • IXFX80N60P3 Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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