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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFX90N60X
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IXFX90N60XIXYS MOSFET N-CH 600V 90A PLUS247-3
Part NumberIXFX90N60X
PackageTO-247-3 Variant
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFX90N60X
DescriptionMOSFET N-CH 600V 90A PLUS247-3
In stock1451
Data sheet
IXFX90N60X.pdf
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  • Specifications
  • Product Details - IXFX90N60X
  • IXFX90N60X Tech Specifications
    IXYS - IXFX90N60X technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFX90N60X
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4.5V @ 8mA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package PLUS247™-3
    Series HiPerFET™, Ultra X
    Rds On (Max) @ Id, Vgs 38mOhm @ 45A, 10V
    Power Dissipation (Max) 1100W (Tc)
    Package / Case TO-247-3 Variant
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 8500 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 210 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 600 V
    Current - Continuous Drain (Id) @ 25°C 90A (Tc)
    Base Product Number IXFX90
  • TheIXFX90N60Xis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 600V 90A PLUS247-3 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4.5V @ 8mA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFX90N60X or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFX90N60X IXFY13N60X3 IXFY30N25X3 IXFX80N60P3
Part Number IXFX90N60X IXFY13N60X3 IXFY30N25X3 IXFX80N60P3
Manufacturer IXYS IXYS IXYS IXYS
Package / Case TO-247-3 Variant - TO-252-3, DPak (2 Leads + Tab), SC-63 TO-247-3 Variant
FET Type N-Channel - N-Channel N-Channel
Supplier Device Package PLUS247™-3 - TO-252AA PLUS247™-3
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Power Dissipation (Max) 1100W (Tc) - 176W (Tc) 1300W (Tc)
Rds On (Max) @ Id, Vgs 38mOhm @ 45A, 10V - 60mOhm @ 15A, 10V 70mOhm @ 500mA, 10V
Series HiPerFET™, Ultra X - HiPerFET™, Ultra X3 HiPerFET™, Polar3™
Base Product Number IXFX90 IXFY13 IXFY30 IXFX80
Current - Continuous Drain (Id) @ 25°C 90A (Tc) - 30A (Tc) 80A (Tc)
Drain to Source Voltage (Vdss) 600 V - 250 V 600 V
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Vgs (Max) ±30V - ±20V ±30V
Package Tube Tube Tube Tube
FET Feature - - - -
Gate Charge (Qg) (Max) @ Vgs 210 nC @ 10 V - 21 nC @ 10 V 190 nC @ 10 V
Vgs(th) (Max) @ Id 4.5V @ 8mA - 4.5V @ 500µA 5V @ 8mA
Mounting Type Through Hole - Surface Mount Through Hole
Input Capacitance (Ciss) (Max) @ Vds 8500 pF @ 25 V - 1450 pF @ 25 V 13100 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V 10V
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  • IXFX90N60X Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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