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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXFY30N25X3
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IXFY30N25X3IXYS MOSFET N-CH 250V 30A TO252AA
Part NumberIXFY30N25X3
PackageTO-252-3, DPak (2 Leads + Tab), SC-63
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXFY30N25X3
DescriptionMOSFET N-CH 250V 30A TO252AA
In stock5947
Data sheet
IXFY30N25X3.pdf
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  • Specifications
  • Product Details - IXFY30N25X3
  • IXFY30N25X3 Tech Specifications
    IXYS - IXFY30N25X3 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXFY30N25X3
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4.5V @ 500µA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-252AA
    Series HiPerFET™, Ultra X3
    Rds On (Max) @ Id, Vgs 60mOhm @ 15A, 10V
    Power Dissipation (Max) 176W (Tc)
    Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Surface Mount
    Input Capacitance (Ciss) (Max) @ Vds 1450 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 250 V
    Current - Continuous Drain (Id) @ 25°C 30A (Tc)
    Base Product Number IXFY30
  • TheIXFY30N25X3is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 250V 30A TO252AA and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4.5V @ 500µA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXFY30N25X3 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXFY30N25X3 IXFY4N85X IXFY26N30X3 IXFZ140N25T
Part Number IXFY30N25X3 IXFY4N85X IXFY26N30X3 IXFZ140N25T
Manufacturer IXYS IXYS IXYS IXYS
Input Capacitance (Ciss) (Max) @ Vds 1450 pF @ 25 V 247 pF @ 25 V 1465 pF @ 25 V 19000 pF @ 25 V
Base Product Number IXFY30 IXFY4 IXFY26 IXFZ140
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 6-SMD, Flat Leads
Series HiPerFET™, Ultra X3 HiPerFET™, Ultra X HiPerFET™, Ultra X3 HiPerFET™, Trench
FET Type N-Channel N-Channel N-Channel N-Channel
Drain to Source Voltage (Vdss) 250 V 850 V 300 V 250 V
Power Dissipation (Max) 176W (Tc) 150W (Tc) 170W (Tc) 445W (Tc)
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 3.5A (Tc) 26A (Tc) 100A (Tc)
Vgs (Max) ±20V ±30V ±20V ±20V
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 60mOhm @ 15A, 10V 2.5Ohm @ 2A, 10V 66mOhm @ 13A, 10V 17mOhm @ 60A, 10V
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA TO-252AA DE475
Package Tube Tube Tube Tube
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V 7 nC @ 10 V 22 nC @ 10 V 255 nC @ 10 V
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
FET Feature - - - -
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Vgs(th) (Max) @ Id 4.5V @ 500µA 5.5V @ 250µA 4.5V @ 500µA 5V @ 4mA
  • IXYS Related Products
  • IXFY30N25X3 Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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