Name: IXYS IXGB75N60BD1
Brand: IXYS
SKU: IXGB75N60BD1
Availability: InStock

Specifications
Product Details - IXGB75N60BD1

IXGB75N60BD1 Tech Specifications
IXYS - IXGB75N60BD1 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXGB75N60BD1

Manufacturer IXYS / Littelfuse

Voltage - Collector Emitter Breakdown (Max) 600 V

Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 75A

Test Condition 480V, 75A, 5Ohm, 15V

Td (on/off) @ 25°C 62ns/220ns

Switching Energy 3.3mJ (off)

Supplier Device Package PLUS264™

Series HiPerFAST™

Reverse Recovery Time (trr) 50 ns

Power - Max 360 W

Package / Case TO-264-3, TO-264AA

Package Tube

Operating Temperature -55°C ~ 150°C (TJ)

Mounting Type Through Hole

Input Type Standard

IGBT Type -

Gate Charge 248 nC

Current - Collector Pulsed (Icm) 300 A

Current - Collector (Ic) (Max) 120 A

Base Product Number IXGB75
TheIXGB75N60BD1is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is IGBT 600V 120A 360W PLUS264 and it falls under the category of Transistors - IGBTs - Single, with Manufacturer of IXYS / Littelfuse and Voltage - Collector Emitter Breakdown (Max) of 600 V and Vce(on) (Max) @ Vge, Ic of 2.3V @ 15V, 75A. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXGB75N60BD1 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute
Part Number	IXGB75N60BD1	IXGA7N60B	IXGF25N250	IXGA7N60CD1
Manufacturer	IXYS	IXYS	IXYS	IXYS
Input Type	Standard	Standard	Standard	Standard
Current - Collector (Ic) (Max)	120 A	14 A	30 A	14 A
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr)	50 ns	-	-	35 ns
Current - Collector Pulsed (Icm)	300 A	30 A	200 A	30 A
Td (on/off) @ 25°C	62ns/220ns	9ns/100ns	-	10ns/65ns
Voltage - Collector Emitter Breakdown (Max)	600 V	600 V	2500 V	600 V
Supplier Device Package	PLUS264™	TO-263AA	ISOPLUS i4-PAC™	TO-263AA
Test Condition	480V, 75A, 5Ohm, 15V	480V, 7A, 22Ohm, 15V	-	480V, 7A, 18Ohm, 15V
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 75A	2V @ 15V, 7A	5.2V @ 15V, 75A	2.5V @ 15V, 7A
Switching Energy	3.3mJ (off)	70µJ (on), 300µJ (off)	-	120µJ (off)
Mounting Type	Through Hole	Surface Mount	Through Hole	Surface Mount
IGBT Type	-	PT	NPT	-
Gate Charge	248 nC	25 nC	75 nC	25 nC
Power - Max	360 W	54 W	114 W	75 W
Package	Tube	Tube	Tube	Tube
Series	HiPerFAST™	HiPerFAST™	-	HiPerFAST™, Lightspeed™
Base Product Number	IXGB75	IXGA7	IXGF25	IXGA7
Package / Case	TO-264-3, TO-264AA	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	i4-Pac™-5 (3 Leads)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Brand introduction

IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

IXYS / Littelfuse

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