Name: IXYS IXGH10N100U1
Brand: IXYS
SKU: IXGH10N100U1
Availability: InStock

Specifications
Product Details - IXGH10N100U1

IXGH10N100U1 Tech Specifications
IXYS - IXGH10N100U1 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXGH10N100U1

Manufacturer IXYS / Littelfuse

Voltage - Collector Emitter Breakdown (Max) 1000 V

Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 10A

Test Condition 800V, 10A, 150Ohm, 15V

Td (on/off) @ 25°C 100ns/550ns

Switching Energy 2mJ (off)

Supplier Device Package TO-247AD

Series -

Reverse Recovery Time (trr) 60 ns

Power - Max 100 W

Package / Case TO-247-3

Package Tube

Operating Temperature -55°C ~ 150°C (TJ)

Mounting Type Through Hole

Input Type Standard

IGBT Type -

Gate Charge 52 nC

Current - Collector Pulsed (Icm) 40 A

Current - Collector (Ic) (Max) 20 A

Base Product Number IXGH10
TheIXGH10N100U1is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is IGBT 1000V 20A 100W TO247AD and it falls under the category of Transistors - IGBTs - Single, with Manufacturer of IXYS / Littelfuse and Voltage - Collector Emitter Breakdown (Max) of 1000 V and Vce(on) (Max) @ Vge, Ic of 3.5V @ 15V, 10A. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXGH10N100U1 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute
Part Number	IXGH10N100U1	IXGH120N30B3	IXGH10N100A	IXGH12N120A2D1
Manufacturer	IXYS	IXYS	IXYS	IXYS
Gate Charge	52 nC	225 nC	-	-
Voltage - Collector Emitter Breakdown (Max)	1000 V	300 V	1000 V	1200 V
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Vce(on) (Max) @ Vge, Ic	3.5V @ 15V, 10A	1.7V @ 15V, 120A	4V @ 15V, 10A	-
IGBT Type	-	PT	-	-
Switching Energy	2mJ (off)	-	-	-
Td (on/off) @ 25°C	100ns/550ns	-	-	-
Package	Tube	Tube	Tube	Tube
Current - Collector Pulsed (Icm)	40 A	480 A	-	-
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-	-
Supplier Device Package	TO-247AD	TO-247AD	TO-247AD	TO-247AD
Series	-	GenX3™	-	-
Test Condition	800V, 10A, 150Ohm, 15V	-	-	-
Base Product Number	IXGH10	IXGH120	IXGH10	IXGH12
Power - Max	100 W	540 W	100 W	-
Input Type	Standard	Standard	Standard	Standard
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Reverse Recovery Time (trr)	60 ns	-	-	-
Current - Collector (Ic) (Max)	20 A	75 A	20 A	12 A

Brand introduction

IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

IXYS / Littelfuse

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