Name: IXYS IXGH10N300
Brand: IXYS
SKU: IXGH10N300
Availability: InStock

Specifications
Product Details - IXGH10N300

IXGH10N300 Tech Specifications
IXYS - IXGH10N300 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXGH10N300

Manufacturer IXYS / Littelfuse

Voltage - Collector Emitter Breakdown (Max) 3000 V

Vce(on) (Max) @ Vge, Ic 5.2V @ 15V, 30A

Test Condition -

Td (on/off) @ 25°C -

Switching Energy -

Supplier Device Package TO-247AD

Series -

Power - Max 100 W

Package / Case TO-247-3

Package Tube

Operating Temperature -55°C ~ 150°C (TJ)

Mounting Type Through Hole

Input Type Standard

IGBT Type -

Gate Charge 32 nC

Current - Collector Pulsed (Icm) 40 A

Current - Collector (Ic) (Max) 18 A

Base Product Number IXGH10
TheIXGH10N300is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is IGBT 3000V 18A 100W TO247AD and it falls under the category of Transistors - IGBTs - Single, with Manufacturer of IXYS / Littelfuse and Voltage - Collector Emitter Breakdown (Max) of 3000 V and Vce(on) (Max) @ Vge, Ic of 5.2V @ 15V, 30A. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXGH10N300 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute
Part Number	IXGH10N300	IXGH100N30C3	IXGH12N60BD1	IXGH10N170A
Manufacturer	IXYS	IXYS	IXYS	IXYS
Switching Energy	-	230µJ (on), 520µJ (off)	500µJ (off)	380µJ (off)
Package	Tube	Tube	Tube	Tube
Voltage - Collector Emitter Breakdown (Max)	3000 V	300 V	600 V	1700 V
Td (on/off) @ 25°C	-	23ns/105ns	20ns/150ns	46ns/190ns
Current - Collector Pulsed (Icm)	40 A	500 A	48 A	20 A
Current - Collector (Ic) (Max)	18 A	75 A	24 A	10 A
Vce(on) (Max) @ Vge, Ic	5.2V @ 15V, 30A	1.85V @ 15V, 100A	2.1V @ 15V, 12A	6V @ 15V, 5A
Series	-	GenX3™	HiPerFAST™	-
Power - Max	100 W	460 W	100 W	140 W
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
IGBT Type	-	PT	-	NPT
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Base Product Number	IXGH10	IXGH100	IXGH12	IXGH10
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Gate Charge	32 nC	162 nC	32 nC	29 nC
Input Type	Standard	Standard	Standard	Standard
Test Condition	-	200V, 50A, 2Ohm, 15V	480V, 12A, 18Ohm, 15V	850V, 10A, 22Ohm, 15V
Supplier Device Package	TO-247AD	TO-247AD	TO-247AD	TO-247AD

Brand introduction

IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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