Name: IXYS IXGH40N120C3
Brand: IXYS
SKU: IXGH40N120C3
Price: 7.59 USD
Availability: InStock

Specifications
Product Details - IXGH40N120C3

IXGH40N120C3 Tech Specifications
IXYS - IXGH40N120C3 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXGH40N120C3

Manufacturer IXYS / Littelfuse

Voltage - Collector Emitter Breakdown (Max) 1200 V

Vce(on) (Max) @ Vge, Ic 4.4V @ 15V, 30A

Test Condition 600V, 30A, 3Ohm, 15V

Td (on/off) @ 25°C 17ns/130ns

Switching Energy 1.8mJ (on), 550µJ (off)

Supplier Device Package TO-247AD

Series GenX3™

Power - Max 380 W

Package / Case TO-247-3

Package Tube

Operating Temperature -55°C ~ 150°C (TJ)

Mounting Type Through Hole

Input Type Standard

IGBT Type PT

Gate Charge 142 nC

Current - Collector Pulsed (Icm) 200 A

Current - Collector (Ic) (Max) 75 A

Base Product Number IXGH40
TheIXGH40N120C3is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is IGBT 1200V 75A 380W TO247 and it falls under the category of Transistors - IGBTs - Single, with Manufacturer of IXYS / Littelfuse and Voltage - Collector Emitter Breakdown (Max) of 1200 V and Vce(on) (Max) @ Vge, Ic of 4.4V @ 15V, 30A. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXGH40N120C3 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute
Part Number	IXGH40N120C3	IXGH38N60U1	IXGH36N60B3D1	IXGH36N60B3C1
Manufacturer	IXYS	IXYS	IXYS	IXYS
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Current - Collector Pulsed (Icm)	200 A	-	200 A	200 A
Power - Max	380 W	200 W	250 W	250 W
Vce(on) (Max) @ Vge, Ic	4.4V @ 15V, 30A	1.8V @ 15V, 38A	1.8V @ 15V, 30A	1.8V @ 15V, 30A
Package	Tube	Tube	Tube	Tube
Current - Collector (Ic) (Max)	75 A	76 A	-	75 A
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Base Product Number	IXGH40	IXGH38	IXGH36	IXGH36
Test Condition	600V, 30A, 3Ohm, 15V	-	400V, 30A, 5Ohm, 15V	400V, 30A, 5Ohm, 15V
IGBT Type	PT	-	PT	PT
Series	GenX3™	-	GenX3™	GenX3™
Voltage - Collector Emitter Breakdown (Max)	1200 V	600 V	600 V	600 V
Input Type	Standard	Standard	Standard	Standard
Switching Energy	1.8mJ (on), 550µJ (off)	-	540µJ (on), 800µJ (off)	390µJ (on), 800µJ (off)
Operating Temperature	-55°C ~ 150°C (TJ)	-	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Td (on/off) @ 25°C	17ns/130ns	-	19ns/125ns	20ns/125ns
Gate Charge	142 nC	-	80 nC	80 nC
Supplier Device Package	TO-247AD	TO-247AD	TO-247AD	TO-247AD

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IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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