Name: IXYS IXGX35N120BD1
Brand: IXYS
SKU: IXGX35N120BD1
Availability: InStock

Specifications
Product Details - IXGX35N120BD1

IXGX35N120BD1 Tech Specifications
IXYS - IXGX35N120BD1 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXGX35N120BD1

Manufacturer IXYS / Littelfuse

Voltage - Collector Emitter Breakdown (Max) 1200 V

Vce(on) (Max) @ Vge, Ic 3.3V @ 15V, 35A

Test Condition 960V, 35A, 5Ohm, 15V

Td (on/off) @ 25°C 50ns/180ns

Switching Energy 3.8mJ (off)

Supplier Device Package PLUS247™-3

Series HiPerFAST™

Reverse Recovery Time (trr) 60 ns

Power - Max 350 W

Package / Case TO-247-3 Variant

Package Tube

Operating Temperature -55°C ~ 150°C (TJ)

Mounting Type Through Hole

Input Type Standard

IGBT Type -

Gate Charge 170 nC

Current - Collector Pulsed (Icm) 140 A

Current - Collector (Ic) (Max) 70 A

Base Product Number IXGX35
TheIXGX35N120BD1is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is IGBT 1200V 70A 350W PLUS247 and it falls under the category of Transistors - IGBTs - Single, with Manufacturer of IXYS / Littelfuse and Voltage - Collector Emitter Breakdown (Max) of 1200 V and Vce(on) (Max) @ Vge, Ic of 3.3V @ 15V, 35A. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXGX35N120BD1 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute
Part Number	IXGX35N120BD1	IXGX400N30A3	IXGX35N120B	IXGX32N170AH1
Manufacturer	IXYS	IXYS	IXYS	IXYS
Series	HiPerFAST™	GenX3™	HiPerFAST™	-
Td (on/off) @ 25°C	50ns/180ns	-	50ns/180ns	27ns/270ns
Reverse Recovery Time (trr)	60 ns	-	-	150 ns
Current - Collector Pulsed (Icm)	140 A	1200 A	140 A	110 A
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-247-3 Variant	TO-247-3 Variant	TO-247-3 Variant	TO-247-3 Variant
Supplier Device Package	PLUS247™-3	PLUS247™-3	PLUS247™-3	PLUS247™-3
Package	Tube	Tube	Tube	Box
Base Product Number	IXGX35	IXGX400	IXGX35	IXGX32
Current - Collector (Ic) (Max)	70 A	400 A	70 A	32 A
Voltage - Collector Emitter Breakdown (Max)	1200 V	300 V	1200 V	1700 V
Test Condition	960V, 35A, 5Ohm, 15V	-	960V, 35A, 5Ohm, 15V	850V, 32A, 2.7Ohm, 15V
Gate Charge	170 nC	560 nC	170 nC	157 nC
IGBT Type	-	PT	PT	NPT
Power - Max	350 W	1000 W	350 W	350 W
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Switching Energy	3.8mJ (off)	-	3.8mJ (off)	4.1mJ (on), 1.25mJ (off)
Input Type	Standard	Standard	Standard	Standard
Vce(on) (Max) @ Vge, Ic	3.3V @ 15V, 35A	1.15V @ 15V, 100A	3.3V @ 15V, 35A	5V @ 15V, 21A

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IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

IXYS / Littelfuse

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