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IXGX35N120BD1IXYS IGBT 1200V 70A 350W PLUS247
Part NumberIXGX35N120BD1
PackageTO-247-3 Variant
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXGX35N120BD1
DescriptionIGBT 1200V 70A 350W PLUS247
In stock3681
Data sheet
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  • Specifications
  • Product Details - IXGX35N120BD1
  • IXGX35N120BD1 Tech Specifications
    IXYS - IXGX35N120BD1 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXGX35N120BD1
    Manufacturer IXYS / Littelfuse
    Voltage - Collector Emitter Breakdown (Max) 1200 V
    Vce(on) (Max) @ Vge, Ic 3.3V @ 15V, 35A
    Test Condition 960V, 35A, 5Ohm, 15V
    Td (on/off) @ 25°C 50ns/180ns
    Switching Energy 3.8mJ (off)
    Supplier Device Package PLUS247™-3
    Series HiPerFAST™
    Reverse Recovery Time (trr) 60 ns
    Power - Max 350 W
    Package / Case TO-247-3 Variant
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Type Standard
    IGBT Type -
    Gate Charge 170 nC
    Current - Collector Pulsed (Icm) 140 A
    Current - Collector (Ic) (Max) 70 A
    Base Product Number IXGX35
  • TheIXGX35N120BD1is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is IGBT 1200V 70A 350W PLUS247 and it falls under the category of Transistors - IGBTs - Single, with Manufacturer of IXYS / Littelfuse and Voltage - Collector Emitter Breakdown (Max) of 1200 V and Vce(on) (Max) @ Vge, Ic of 3.3V @ 15V, 35A. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXGX35N120BD1 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXGX35N120BD1 IXGX400N30A3 IXGX35N120B IXGX32N170AH1
Part Number IXGX35N120BD1 IXGX400N30A3 IXGX35N120B IXGX32N170AH1
Manufacturer IXYS IXYS IXYS IXYS
Series HiPerFAST™ GenX3™ HiPerFAST™ -
Td (on/off) @ 25°C 50ns/180ns - 50ns/180ns 27ns/270ns
Reverse Recovery Time (trr) 60 ns - - 150 ns
Current - Collector Pulsed (Icm) 140 A 1200 A 140 A 110 A
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 Variant TO-247-3 Variant TO-247-3 Variant TO-247-3 Variant
Supplier Device Package PLUS247™-3 PLUS247™-3 PLUS247™-3 PLUS247™-3
Package Tube Tube Tube Box
Base Product Number IXGX35 IXGX400 IXGX35 IXGX32
Current - Collector (Ic) (Max) 70 A 400 A 70 A 32 A
Voltage - Collector Emitter Breakdown (Max) 1200 V 300 V 1200 V 1700 V
Test Condition 960V, 35A, 5Ohm, 15V - 960V, 35A, 5Ohm, 15V 850V, 32A, 2.7Ohm, 15V
Gate Charge 170 nC 560 nC 170 nC 157 nC
IGBT Type - PT PT NPT
Power - Max 350 W 1000 W 350 W 350 W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Switching Energy 3.8mJ (off) - 3.8mJ (off) 4.1mJ (on), 1.25mJ (off)
Input Type Standard Standard Standard Standard
Vce(on) (Max) @ Vge, Ic 3.3V @ 15V, 35A 1.15V @ 15V, 100A 3.3V @ 15V, 35A 5V @ 15V, 21A
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Certifications & Memberships We strictly controls the quality of products, environment and services.Through the ISO certification of the third party. View More >

Brand introduction

IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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